Semiconductor Capacitor High-k Dielectric Fabrication

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Solution Overview

Problem

Current semiconductor arrangements face challenges in optimizing capacitance in capacitors due to variations in distance and dielectric material composition, leading to inconsistent performance in electronic devices.

Innovation Solution

The semiconductor arrangement incorporates multiple capacitors with varying vertical conductive structures and dielectric materials, where the capacitance is determined by the distance and composition of both, allowing for tailored capacitance values through precise fabrication techniques such as electrochemical plating and dielectric material deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the distance between vertical conductive structures is reduced to increase capacitance, then the capacitance value increases, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvecapacitance valueVSAvoiddistance control precision

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent changes the dielectric parameter (using high-k dielectric material) to achieve higher capacitance without reducing the distance between conductive structures. This allows maintaining manufacturable dimensions while achieving the desired capacitance increase through material property modification rather than geometric scaling.

Inventive Principle:

Principle #35Parameter changes

2Adaptability or versatility

If different dielectric materials are used to achieve distinct capacitance values, then the capacitance can be tailored, but the device complexity increases

Engineering Contradiction:

Improvecapacitance tailoring capabilityVSAvoidfabrication process complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent applies different dielectric materials locally to specific capacitor regions where distinct capacitance values are required. This allows capacitance tailoring for specific applications while keeping other capacitors with standard materials, thereby managing overall device complexity through selective differentiation rather than universal complexity.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the fabrication of semiconductor arrangements with capacitors that have distinct capacitance values, enhancing performance by reducing electrical noise and voltage regulation, particularly in RF transceiver modules and other electronic devices.

Implementation Method 1

precise fabrication techniques such as electrochemical plating

Methodology Applied

Scientific EffectElectrochemical plating: Electrodeposition

Implementation Method 2

dielectric material deposition

Methodology Applied

Scientific EffectDielectric material deposition: Deposition (physical)

Data Source

PatentUS11652136B2Semiconductor arrangement

Publication Date: 2023.05.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor arrangement is provided. The semiconductor arrangement includes a molding layer and a first capacitor. The first capacitor includes a first vertical conductive structure within the molding layer, a second vertical conductive structure within the molding layer, and a first high-k dielectric material between the first vertical conductive structure and the second vertical conductive structure.