Semiconductor Capacitor High-k Dielectric Leakage Control
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Solution Overview
Problem
In semiconductor devices, miniaturization requires increasing capacitive element capacitance without expanding its planar shape, while also minimizing leakage current, which is challenging due to the trade-off between dielectric film thickness and relative permittivity.
Innovation Solution
A semiconductor device with a capacitive element featuring a lower electrode with a 2 nm or less oxide layer, a dielectric film comprising a first phase at room temperature and a higher-temperature phase with higher relative permittivity, and an upper electrode, where the dielectric film is formed using a metal oxide material like zirconium oxide, allowing for increased capacitance without excessive thickness reduction and thus suppressing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of the capacitive dielectric film is reduced to increase capacitance, then the capacitance increases, but the leakage current increases
Solution Approach 1:
The patent changes the material composition parameters of the dielectric film by forming a composite structure with a high-k dielectric layer (containing metal oxides like hafnium oxide, zirconium oxide, or titanium oxide) and a silicon oxide layer. This material parameter change enables achieving high capacitance without excessive thickness reduction, thereby suppressing leakage current while maintaining electrical performance
Solution Approach 2:
The patent employs a composite dielectric film structure consisting of a high-k dielectric layer and a silicon oxide layer. The high-k dielectric layer provides high relative permittivity for increased capacitance, while the silicon oxide layer provides good interface characteristics and low leakage current, thus resolving the contradiction between capacitance enhancement and leakage suppression
2Quantity of substance
If the relative permittivity of the dielectric film is increased to increase capacitance, then the capacitance increases, but the manufacturing complexity increases
Solution Approach 1:
The patent achieves high relative permittivity by controlling the composition parameters of the high-k dielectric layer, using metal oxides such as hafnium oxide, zirconium oxide, or titanium oxide with established deposition parameters. This approach increases capacitance while maintaining manageable manufacturing complexity through well-defined material parameters
Solution Approach 2:
The patent introduces a silicon oxide layer as an intermediary between the high-k dielectric layer and the electrode. This intermediary layer simplifies manufacturing by providing a stable interface that reduces defects and process variability, thereby enabling the use of high-k materials without excessively increasing manufacturing complexity
3Quantity of substance
If the planar shape of the capacitive element is increased to increase capacitance, then the capacitance increases, but the device area increases
Solution Approach 1:
The patent changes the dielectric property parameters by using high-k dielectric materials and optimizing the dielectric film structure, enabling significant capacitance increase within the same planar footprint. This parameter change approach increases capacitance without expanding the device area
Solution Approach 2:
The patent transitions from increasing capacitance through planar expansion to increasing it through vertical dimension optimization by stacking multiple dielectric layers and utilizing high-k materials. This dimensional shift enables higher capacitance density without increasing the planar shape of the capacitive element
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases capacitive element capacitance without increasing its planar size and minimizes leakage current, while avoiding the need for high-cost rare earth materials and maintaining low processing costs.
Implementation Method 1
the dielectric film includes at least a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state
Implementation Method 2
the lower electrode includes an oxide layer having a thickness of 2 nm or less over the surface layer
Data Source
AI summary
A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.