Semiconductor Capacitor with Insulator Sandwich Structure
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Solution Overview
Problem
Conventional semiconductor capacitors lack the ability to meet varying requirements for withstand voltage and conductance, as they are manufactured with capacitors of the same characteristics on a semiconductor substrate, limiting their adaptability to different demands.
Innovation Solution
A semiconductor capacitor design where insulators are sandwiched between each electrode in the electrode group, allowing for varying tolerances and conductances among capacitors, enabling the creation of capacitors with different voltage withstand capabilities and leakage current characteristics, effectively forming a three-terminal capacitor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional semiconductor capacitors are manufactured with uniform capacitor structures, then manufacturing simplicity is maintained, but adaptability to different voltage withstand and conductance requirements deteriorates
Solution Approach 1:
The capacitor structure is segmented into multiple independent components: insulator layers with different thicknesses, electrode groups with varying configurations, and semiconductor regions with different doping characteristics. This segmentation allows each component to be optimized independently for specific voltage withstand or conductance requirements while maintaining overall manufacturing feasibility through standardized fabrication processes.
2Manufacturing precision
If insulators are sandwiched between each electrode in the electrode group, then capacitor characteristics can be tailored to meet specific requirements, but manufacturing process complexity increases
Solution Approach 1:
The invention utilizes parameter changes in the insulator layers, specifically varying the thickness of insulators sandwiched between electrode groups, to precisely control capacitor characteristics such as voltage withstand and conductance. This approach enables tailored capacitor performance by adjusting geometric parameters during manufacturing while using standard fabrication techniques, thereby achieving high manufacturing precision without proportionally increasing process complexity.
3Adaptability or versatility
If multiple capacitors with different characteristics are formed on the semiconductor substrate, then circuit adaptability improves, but device area increases
Solution Approach 1:
The invention applies local quality by creating capacitors with different characteristics at specific locations on the semiconductor substrate through localized variations in insulator thickness and electrode configuration. This allows multiple capacitor types to be integrated in a compact arrangement, achieving high circuit adaptability without proportionally increasing the overall device area, as each region is optimized for its specific function.
Data Source
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AI summary
To meet various requirements with a circuit formed from a semiconductor substrate. The present invention is provided with a semiconductor substrate (2A), an electrode group (4) that is formed on the semiconductor substrate (2A), and insulators (2B), wherein a plurality of capacitors (C1-C3) are formed. The plurality of capacitors (C1-C3) have a structure in which the insulators (2B) are sandwiched between each electrode of the electrode group (4). At least one of the plurality of capacitors (C1-C3) is set to be different in at least one of a tolerance, which is a capability of the capacitors (C1-C3) to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors (C1-C3).