Semiconductor Capacitor Layout With 3D Gate Isolation Cuts
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in effectively isolating neighboring devices in three-dimensional structures using poly cut layers, which is inadequate for achieving high device packing density and performance, especially as technology scales down to nanometer nodes.
Innovation Solution
The implementation of cutting structures, such as poly cut layers (CPOs) and cut poly on oxide dielectric edge layers (CPODEs), which disconnect gates and electrical conductors to prevent leakage between devices, allowing for higher capacitor capacitance density without significantly impacting via layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If poly cut layers are used to isolate neighboring devices in three-dimensional structures, then leakage between devices is prevented, but device packing density and performance are compromised
Solution Approach 1:
The patent transitions from two-dimensional planar isolation to three-dimensional isolation by forming cutting structures that extend vertically through multiple layers. The cutting structures include mandrels positioned in different layers (first cutting structure in first layer, second cutting structure in second layer) that collectively isolate gates in three-dimensional space, preventing leakage while maintaining high packing density.
Solution Approach 2:
The patent implements nested cutting structures where inner cutting structures are positioned within outer cutting structures. Specifically, the second cutting structure is nested within the first cutting structure, creating a hierarchical isolation system that effectively blocks leakage paths while minimizing the space required for isolation, thus improving device packing density.
2Reliability
If poly cut layers are used to isolate neighboring devices, then device isolation is achieved, but cell height increases
Solution Approach 1:
The patent divides the isolation function into multiple segmented cutting structures distributed across different layers rather than using a single tall isolation structure. The first cutting structure is positioned at a first vertical level and the second cutting structure at a second vertical level, creating stepped isolation that prevents leakage while controlling overall cell height.
Solution Approach 2:
The patent applies isolation selectively at specific locations and layers where leakage paths exist. The cutting structures are positioned to target specific leakage paths between neighboring devices rather than providing uniform isolation throughout the entire cell height, optimizing the balance between isolation effectiveness and cell height.
Data Source
AI summary
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.