Semiconductor Capacitor Leakage Current Reduction
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Solution Overview
Problem
The existing stacked structure of smoothing capacitors in semiconductor devices experiences high leakage current due to differences in crystallinity between the bottom electrode and the base film, which are difficult to eliminate completely during the manufacturing process.
Innovation Solution
The solution involves forming a pseudo capacitor insulating film and a pseudo top electrode above the conductive plug, separated from the main capacitor insulating film and top electrode by a groove, which electrically insulates the top electrode from the pseudo top electrode, preventing leakage current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a stacked structure is used for the smoothing capacitor to reduce area, then the area is reduced, but leakage current increases due to crystallinity differences between the bottom electrode and base film
Solution Approach 1:
The patent segments the capacitor structure into distinct regions: a first region where the bottom electrode contacts the conductive plug, and a second region where the top electrode is spaced apart from the conductive plug. This segmentation prevents the formation of heterogeneous regions that cause leakage current, while maintaining the stacked structure's area efficiency.
Solution Approach 2:
The patent applies local quality by creating different spatial configurations for the electrodes relative to the conductive plug. The bottom electrode makes contact at a specific location, while the top electrode is positioned to avoid contact, ensuring that the capacitor operates in a region with uniform crystallinity and avoiding leakage pathways.
2Reliability
If the bottom electrode contacts the conductive plug directly to form the capacitor, then the capacitor function is achieved, but heterogeneous regions form causing leakage current
Solution Approach 1:
The capacitor structure is segmented into two functional regions: a contact region at the bottom electrode and a non-contact region at the top electrode. This segmentation allows the capacitor to maintain its function while avoiding the formation of heterogeneous regions that cause leakage current.
Solution Approach 2:
The patent resolves the leakage issue by transitioning from a purely vertical contact configuration to a configuration that utilizes planar spacing. By spacing the top electrode apart from the conductive plug in planar view, the invention creates a three-dimensional arrangement that eliminates leakage pathways while maintaining electrical functionality.
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit including a first capacitor. The first capacitor includes: a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug; a first insulating film on the first bottom electrode; and a first top electrode on the first insulating film. The first top electrode is spaced apart from the first conductive plug in planar view.