Semiconductor Capacitor Metal Layer for Hydrogen Sintering
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Solution Overview
Problem
In semiconductor device manufacturing, the tungsten layer acts as a barrier to hydrogen penetration during hydrogen sintering, reducing electrical performance, and omitting it leads to poor uniformity and increased resistance between contact and electrode.
Innovation Solution
A semiconductor device design where a metal layer is partially exposed over a conductive layer, allowing smooth hydrogen sintering and serving as an etching stop layer, maintaining conductive layer thickness and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a tungsten layer is added to the upper electrode to serve as an etching stop layer, then the etching control is improved, but the hydrogen sintering treatment is hindered due to the barrier effect
Solution Approach 1:
The patent extracts the etching stop layer function from the tungsten layer and assigns it to a separate dedicated etching stop layer. This allows the upper electrode to be composed of only the conductive layer and metal layer, removing the hydrogen barrier while preserving etching control through the dedicated stop layer.
Solution Approach 2:
The patent segments the functions of the upper electrode by separating the etching stop layer from the conductive layers. The upper electrode consists of a conductive layer (boron-doped silicon germanium) and a metal layer, while the etching stop layer is a separate component, allowing each layer to optimize its specific function without compromising the other.
2Reliability
If the tungsten layer is omitted to enable hydrogen sintering, then the hydrogen penetration is improved, but the thickness of the conductive layer must be increased which reduces uniformity
Solution Approach 1:
The patent extracts the etching stop layer function from the tungsten layer and assigns it to a separate dedicated etching stop layer. This allows the upper electrode to be composed of only the conductive layer and metal layer, removing the hydrogen barrier while preserving etching control through the dedicated stop layer.
Solution Approach 2:
The patent segments the functions of the upper electrode by separating the etching stop layer from the conductive layers. The upper electrode consists of a conductive layer (boron-doped silicon germanium) and a metal layer, while the etching stop layer is a separate component, allowing each layer to optimize its specific function without compromising the other.
3Reliability
If the tungsten layer is omitted from the upper electrode, then the hydrogen sintering is improved, but the resistance between contact and electrode increases
Solution Approach 1:
The patent changes the material composition and structure of the upper electrode by introducing a metal layer (such as copper or cobalt) with superior electrical conductivity. This metal layer is formed on the conductive layer and provides a low-resistance path for electrical connection, reducing the contact resistance between the contact plug and the upper electrode while allowing the conductive layer to maintain optimal thickness for hydrogen sintering.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves electrical performance by enabling effective hydrogen sintering and reducing contact resistance through better uniformity and etching control.
Implementation Method 1
the metal layer exposes a portion of the first conductive layer, that is, the metal layer does not completely cover the first conductive layer, the subsequent hydrogen sintering treatment can be smoothly performed
Implementation Method 2
since the metal layer can be used as an etching stop layer in the subsequent contact formation process
Implementation Method 3
the hydrogen sintering (H2 sintering) treatment is used to reduce dangling bonds to improve the electrical performance of the semiconductor device
Data Source
AI summary
A semiconductor device including a substrate and a capacitor is provided. The substrate includes a memory array region. The capacitor is located in the memory array region. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is located on the substrate. The second electrode includes a first conductive layer and a metal layer. The first conductive layer is located on the first electrode. The metal layer is located on the first conductive layer. The metal layer exposes a portion of the first conductive layer. The insulating layer is located between the first electrode and the second electrode.