Semiconductor Capacitor Design for Noise Reduction and Power Stability
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Solution Overview
Problem
High-performance semiconductor devices require high integration, low voltage, and high speed operation, but existing capacitors in peripheral circuits face challenges in providing stable power while generating noise that affects signal transfer characteristics.
Innovation Solution
The semiconductor device incorporates a high capacity capacitor configuration that includes a combination of planar and non-planar type capacitors, with MOS and MIM capacitors, and internal contact plugs to enhance integration and reduce design rules, allowing for increased capacitance and wiring freedom.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high capacity capacitor is formed in the peripheral circuit region, then the power stability is improved, but the noise generation increases which affects signal transfer characteristics
Solution Approach 1:
The capacitor is divided into multiple electrode patterns (first, second, third, fourth electrodes) arranged in an interdigitated configuration. This segmentation increases the effective capacitance area while distributing the noise generation across multiple smaller electrodes, reducing the overall noise impact on signal transfer characteristics.
Solution Approach 2:
The capacitor electrodes are arranged in a planar interdigitated pattern rather than a simple parallel plate configuration. This two-dimensional arrangement increases the capacitance by maximizing the overlapping area between positive and negative electrodes within the available peripheral circuit region, while the distributed structure helps mitigate noise effects.
2Reliability
If the capacitor capacity is increased to provide stable power, then the power stability is improved, but the area occupied in the peripheral circuit region increases
Solution Approach 1:
The capacitor uses a planar interdigitated electrode arrangement that maximizes capacitance within a compact footprint. By stacking multiple electrode pairs in a layered configuration and utilizing the overlapping areas between adjacent electrodes, high capacitance is achieved without proportionally increasing the occupied area in the peripheral circuit region.
Solution Approach 2:
The capacitor structure integrates multiple functional elements (multiple electrodes, dielectric layers, and conductive plugs) into a single compact unit. The first and second electrodes are combined with the third and fourth electrodes in an interdigitated arrangement, allowing the capacitor to achieve high capacity while occupying minimal space in the peripheral circuit region.
3Quantity of substance
If more wiring connections are added to increase capacitance, then the capacitor capacity is improved, but the design rule complexity increases
Solution Approach 1:
The electrode patterns serve multiple functions: they form the capacitor plates, provide electrical connections through the dielectric layer, and establish the necessary wiring connections to the common node. This multi-functionality reduces the need for separate wiring structures, simplifying the design rules while achieving the required capacitance.
Solution Approach 2:
A common node is introduced as an intermediary element that collects connections from multiple capacitor electrodes. This common node simplifies the wiring complexity by providing a single connection point for multiple electrodes, reducing the number of direct wiring connections needed and simplifying the overall design rules.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases capacitance, reduces noise impact, and enhances the semiconductor device's ability to provide stable power, improving integration and operational speed.
Implementation Method 1
a high capacity capacitor for removing noise has been formed in a peripheral circuit region
Implementation Method 2
forming a non-planar type capacitor including a non-planar type storage node, a dielectric layer, and a non-planar type top electrode
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first region and a second region; a first planar type capacitor including a gate electrode which is positioned in any one region of the first region and the second region; a non-planar type capacitor including a plurality of non-planar type electrodes which are positioned in the other region of the first region and the second region; a second planar type capacitor including a planar type electrode which is positioned over the first planar type capacitor to overlap with the first planar type capacitor; and a common node under the non-planar type capacitor.