Semiconductor Capacitor Structure With Vertical Stacking
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Solution Overview
Problem
Conventional semiconductor structures face limitations in increasing capacitance without expanding layout area, as the capacitance is proportional to the surface area of conductors and inversely related to the gap between them, making it challenging to enhance capacitance effectively.
Innovation Solution
The integration of horizontally and vertically stacked capacitors within a semiconductor structure, where the thickness of the dielectric layer is adjusted to control capacitance, and conductive bridges and plugs are strategically placed to increase the parallel area of the conductor-insulator-conductor structure, allowing for enhanced capacitance without increasing layout area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the surface area of conductors is increased to enhance capacitance, then capacitance is improved, but layout area increases
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional vertically stacked capacitor structures. Multiple capacitor units are stacked in the vertical direction (z-axis) above the same footprint area, effectively utilizing the third dimension to increase total capacitance without expanding the layout area. Each stacked capacitor unit consists of conductive plates separated by dielectric layers, arranged vertically to maximize capacitance density within the confined planar footprint.
2Quantity of substance
If the gap between conductors is reduced to increase capacitance, then capacitance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent optimizes the dielectric layer thickness parameter to achieve high capacitance values. By carefully controlling and adjusting the thickness of the dielectric layer (which forms the gap between conductors), the design achieves enhanced capacitance while managing manufacturing precision requirements. The dielectric constant and thickness are tuned as key parameters to maximize capacitance within feasible fabrication tolerances.
3Quantity of substance
If vertically stacked capacitors are integrated to increase capacitance density, then capacitance is improved, but device complexity increases
Solution Approach 1:
The capacitor structure is segmented into multiple discrete capacitor units stacked vertically. Each unit comprises conductive plates and dielectric layers, and they are arranged in series or parallel configurations. This segmentation allows the total capacitance to be distributed across multiple smaller units, achieving high capacitance density while enabling modular design and fabrication approaches that manage overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases capacitance, with some embodiments achieving over 100 times the capacitance of conventional CMOS structures, while maintaining the same layout area, by optimizing the dielectric layer thickness and conductor placement.
Implementation Method 1
When two conductors of a capacitor experience voltage difference, an electrical field is developed causing a net positive charge to collect on one conductor and a net negative charge to collect on the other conductor
Implementation Method 2
Capacitance relates to the ratio of electric charges on the two conductors and potential difference between them. The capacitance of a capacitor is proportional to the surface area of the conductors and inversely to the gap between the two conductors
Data Source
AI summary
The present disclosure provides a semiconductor structure, including: a transistor, including a gate structure and a source/drain structure; a source/drain contact, disposed over the source/drain structure; a gate contact, disposed over the gate structure; and a conductive bridge, disposed over the transistor, wherein the conductive bridge overlaps the source/drain contact from a top view perspective and electrically connecting the gate contact. The present disclosure also provides a method for forming the same.