Semiconductor Device Carbon Diffusion Barrier
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Solution Overview
Problem
As semiconductor devices miniaturize, the diffusion of impurities such as boron between the source and drain regions and the channel region leads to increased leak current due to the short channel effect, and the introduction of carbon to suppress diffusion can result in higher contact resistance.
Innovation Solution
Incorporating silicon carbon layers between the semiconductor layers and the channel region to act as diffusion suppressing layers, formed using the epitaxial crystal growth method, with controlled carbon concentrations to minimize contact resistance and impurity diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If carbon is introduced to suppress impurity diffusion, then the short channel effect is reduced, but contact resistance increases
Solution Approach 1:
The patent applies different carbon concentrations in different regions: high carbon concentration (5-20 at%) in the diffusion suppressing layer to prevent impurity diffusion, and low carbon concentration (0.1-5 at%) in the semiconductor layers in contact regions to maintain low contact resistance. This local differentiation resolves the contradiction between suppressing short channel effect and maintaining low contact resistance.
Solution Approach 2:
The semiconductor device is divided into distinct layers with different carbon concentrations: semiconductor layers with low carbon content for low contact resistance, and a diffusion suppressing layer with high carbon content for effective impurity barrier. This segmentation allows each layer to optimize its function without compromising the other.
2Productivity
If semiconductor devices are miniaturized, then device density increases, but impurity diffusion between source/drain and channel increases
Solution Approach 1:
The diffusion suppressing layer acts as an intermediary barrier between the source/drain regions and the channel region. This layer with high carbon concentration (5-20 at%) specifically positioned between the semiconductor layers prevents impurity diffusion while allowing the device to be miniaturized, thus enabling high device density without compromising impurity control.
3Reliability
If carbon concentration is increased to suppress diffusion, then impurity barrier improves, but contact resistance increases
Solution Approach 1:
The patent implements local quality differentiation by setting carbon concentration to 5-20 at% in the diffusion suppressing layer for effective impurity barrier, while maintaining 0.1-5 at% in the semiconductor layers at contact regions. This spatial variation in carbon concentration simultaneously achieves strong diffusion suppression and low contact resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the short channel effect by reducing impurity diffusion while maintaining low contact resistance, enabling further miniaturization of semiconductor devices without affecting other components on the same substrate.
Implementation Method 1
the diffusion of impurities such as boron between the source and drain regions and the channel region
Implementation Method 2
formed using the epitaxial crystal growth method, with controlled carbon concentrations
Data Source
AI summary
A semiconductor device is provided with: a substrate; a first region provided above the substrate; a second region provided away from the first region in a first direction; a third region provided between the first region and the second region, the third region facing an electrode portion; a fourth region provided between the first region and the third region; and a fifth region provided between the second region and the third region. The fourth and fifth regions include carbon (C). Carbon concentrations in the first and second regions are lower than carbon concentrations in the fourth and fifth regions.