Semiconductor Carrier Layout With Direct Diode Contact
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices with active switches and diodes face challenges in improving their characteristics, particularly in mechanical stability and efficiency, as they often share common semiconductor layers and lack effective edge termination structures.
Innovation Solution
A semiconductor device comprising a transistor and a diode, both formed in separate semiconductor layer stacks, mounted to a metallic carrier with the diode's anode in direct contact, and an edge termination structure that surrounds the central portion, providing mechanical stability and reducing stray inductances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire connections are used to connect diode and transistor terminals, then electrical connectivity is achieved, but mechanical stability decreases and stray inductances increase
Solution Approach 1:
The patent merges the diode and transistor mounts into a single common mount structure. The diode mount and transistor mount are integrated such that both semiconductor devices are mechanically and electrically connected to the same substrate, eliminating the need for separate wire connections and improving mechanical stability while reducing stray inductances.
2Ease of manufacture
If separate semiconductor layer stacks are used for transistor and diode, then manufacturing flexibility is improved, but device complexity increases
Solution Approach 1:
The patent segments the semiconductor device into two separate layer stacks: a first layer stack for the transistor and a second layer stack for the diode. Each stack can be manufactured independently using optimized processes for that specific device type, then both are mounted on the common mount. This segmentation allows manufacturing flexibility while the integrated mount structure manages the overall complexity.
3Loss of energy
If direct contact between anode metal layer and carrier is implemented, then stray inductances are reduced, but manufacturing precision requirements increase
Solution Approach 1:
The anode metal layer of the diode is directly integrated with the common mount structure, creating a direct electrical contact path that eliminates intermediate wire connections. This merging of the diode anode with the mount reduces stray inductances in the current path.
Solution Approach 2:
The common mount structure serves multiple functions simultaneously: it provides mechanical support for both the transistor and diode, establishes electrical connections for both devices, and acts as the heat sink. This multi-functionality reduces the need for separate connection structures and simplifies the overall manufacturing process despite the direct contact requirement.
Data Source
AI summary
A semiconductor device includes: a transistor formed in a first semiconductor layer stack; a diode formed in a second semiconductor layer stack, the diode including an anode metal layer; and a carrier. The transistor and the diode are mounted to the carrier. A terminal of the transistor is electrically connected to the carrier, and the anode metal layer is in direct contact with the carrier.