Semiconductor Carrier Substrate Diode Structure Heat Dissipation
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Solution Overview
Problem
Existing semiconductor chips face challenges in efficient heat dissipation due to the use of electrical insulators, which hinder performance and service life, as they lack simultaneous electrical insulation and thermal conductivity.
Innovation Solution
A carrier substrate with a diode structure that electrically insulates one major face from the other, using monocrystalline semiconductor materials like silicon or gallium arsenide, which allows for efficient heat dissipation while maintaining electrical insulation, and a method for producing semiconductor chips with integrated diode structures for bidirectional insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an electrical insulator is arranged between the radiation-generating region and the mounting element, then electrical insulation is achieved, but thermal conductivity deteriorates
Solution Approach 1:
The patent changes the electrical parameters of the carrier substrate by forming a diode structure that exhibits polarity-dependent electrical insulation. The substrate is doped to create regions with different electrical properties, enabling it to insulate in one polarity while maintaining thermal conductivity. This resolves the contradiction by transforming the carrier from a simple conductive substrate to one with controlled electrical insulation properties that do not compromise heat dissipation.
Solution Approach 2:
The patent creates a composite structure within the carrier substrate by integrating the diode structure into the doped semiconductor material. The carrier substrate itself serves as both the mechanical support and the electrical insulator when reverse-biased, eliminating the need for separate insulating layers that would impede heat flow. The composite doping profile (n-type and p-type regions) enables simultaneous thermal management and electrical insulation functions.
2Reliability
If a diode structure is formed in the carrier substrate, then electrical insulation is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the carrier substrate function with the electrical insulation function by forming the diode structure directly within the substrate material. Instead of adding separate insulating layers or components, the insulation functionality is integrated into the substrate itself through doping. This combining approach maintains manufacturing simplicity while achieving the desired electrical insulation, as the diode structure is formed using standard semiconductor doping processes compatible with existing production lines.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient heat dissipation and reliable electrical insulation, improving the performance and service life of semiconductor chips by using a diode structure in the carrier substrate, which is formed through layered doping or full-surface doping, ensuring effective thermal conductivity and bidirectional electrical insulation.
Implementation Method 1
A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage
Implementation Method 2
monocrystalline semiconductor materials like silicon or gallium arsenide, which allows for efficient heat dissipation while maintaining electrical insulation
Data Source
AI summary
A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.