Semiconductor Carrier Thermal Expansion Matching
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Solution Overview
Problem
Current methods for producing semiconductor components face challenges in efficiently managing thermomechanical stresses due to mismatched coefficients of thermal expansion between auxiliary and connection carriers, leading to potential bending and processing issues.
Innovation Solution
The method involves applying an auxiliary carrier with a specific lateral coefficient of thermal expansion to one side of a semiconductor body, which is grown on a different substrate, and a connection carrier with a matching coefficient to the other side, ensuring that the coefficients differ by no more than 50%, thereby minimizing thermomechanical stresses. This is achieved by using materials like silicon, glass, or ceramics, and incorporating a sacrificial layer for gentle removal and connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If auxiliary carrier and connection carrier have different coefficients of thermal expansion, then they can be made from different materials for functional versatility, but thermomechanical stresses increase causing bending and processing issues
Solution Approach 1:
The patent applies parameter changes by carefully selecting and controlling the coefficient of thermal expansion values for both carriers, ensuring they fall within a specific range (4-14×10^-6/K) and differ by no more than 50%. This parameter optimization allows the use of different materials (such as silicon, glass, or ceramics for the auxiliary carrier and silicon or metal for the connection carrier) while maintaining structural stability and minimizing thermomechanical stresses during temperature variations in the production process.
2Reliability
If strict matching of thermal expansion coefficients is enforced, then thermomechanical stresses are minimized, but material selection becomes more constrained
Solution Approach 1:
The patent defines an optimized parameter range for the coefficients of thermal expansion (4-14×10^-6/K) and specifies that they should differ by no more than 50%. This parameter optimization allows the use of different materials (such as silicon, glass, or ceramics for the auxiliary carrier and silicon or metal for the connection carrier) while maintaining structural stability and minimizing thermomechanical stresses during temperature variations in the production process.
3Strength
If growth substrate is retained during carrier application, then semiconductor body structural support is maintained, but interference with auxiliary carrier application occurs
Solution Approach 1:
The patent applies preliminary action by removing the growth substrate from the semiconductor body before applying the auxiliary carrier. This preparatory step eliminates potential interference from the growth substrate during the carrier application process, ensuring proper adhesion and positioning of the auxiliary carrier on the semiconductor body's first side, while the semiconductor body itself provides sufficient structural support for subsequent processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient production of semiconductor components with reduced thermomechanical stresses, preventing bending and facilitating further processing, thus enhancing the component's adjustment and overall production efficiency.
Implementation Method 1
The auxiliary carrier has a first lateral coefficient of thermal expansion, and the connection carrier has a second lateral coefficient of thermal expansion, wherein the first and the second lateral coefficient of thermal expansion differ by at most 50%
Data Source
AI summary
A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.