Semiconductor Package Carrier Layer to Prevent Residue and Warpage
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Solution Overview
Problem
During semiconductor device package manufacturing, adhesive materials like tape or film used for carrier support often remain on the semiconductor structure, causing contamination and warpage issues after carrier removal.
Innovation Solution
Employing a metallic layer with two metal foils between the carrier and semiconductor structure, where one foil is removed during de-carrier operation, eliminating adhesive residue and reducing warpage, while the remaining metal layer serves as a seed layer for subsequent operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If adhesive materials such as tape or film are used to support the semiconductor structure during manufacturing, then the semiconductor structure can be supported during operations, but adhesive materials remain on the semiconductor structure causing contamination and reliability concerns
Solution Approach 1:
The patent changes the material parameter from adhesive materials (tape or film) to a metallic layer with specific properties (first and second layers with different removal characteristics). This parameter change allows the carrier support function to be maintained while eliminating the contamination problem, as the metallic layers can be completely or selectively removed without leaving residue.
Solution Approach 2:
The patent employs a disposable metallic layer structure where the first layer is intentionally designed to be removed during de-carrier operations. This disposable approach eliminates the need for adhesive materials that leave residues, as the metallic layer serves its support function temporarily and then is completely removed or selectively stripped away.
2Ease of manufacture
If adhesive materials are used to support the semiconductor structure, then the structure can be maintained during manufacturing, but warpage of the semiconductor structure occurs after carrier removal
Solution Approach 1:
The patent changes the support layer material from adhesive materials to a metallic layer with controlled thickness and mechanical properties. The metallic layer's parameters (thickness, material composition) are optimized to provide adequate support during manufacturing while minimizing warpage effects, and the selective removal capability allows for controlled elimination of the support layer without causing structural distortion.
Solution Approach 2:
The metallic layer is segmented into two distinct layers with different functions: the first layer serves as the removable support layer that provides mechanical strength during manufacturing, while the second layer remains as a thin seed layer. This segmentation allows the support function to be fulfilled without the entire layer causing warpage when removed, as only the first layer is removed while the second layer maintains structural integrity.
3Reliability
If a metallic layer with two layers is used instead of adhesive materials, then contamination from adhesive residue is eliminated, but the device complexity increases
Solution Approach 1:
The patent extracts the problematic adhesive material function and replaces it with a metallic layer system. The first layer is extracted as a removable component that provides temporary support, while the second layer is retained as a functional seed layer. This extraction eliminates the contamination issue while the two-layer structure, though more complex than single-layer adhesive, provides superior control and functionality.
Data Source
AI summary
A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.