Semiconductor Charge Carrier Transfer via Band Offset
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Solution Overview
Problem
Traditional doping methods for semiconductor devices, such as in situ doping or ion implantation, are limited in achieving high carrier concentrations in semiconductors, which restricts the reduction of metal/semiconductor contact resistance in devices like FinFET and nanowire devices.
Innovation Solution
A semiconductor device structure where a second doped semiconductor material with a high charge carrier concentration is in direct contact with a first doped semiconductor material, transferring additional charge carriers to overcome the carrier concentration limits, utilizing a band offset between the materials to facilitate this transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional doping methods are used to increase carrier concentration, then contact resistance is reduced, but the carrier concentration reaches a practical upper limit
Solution Approach 1:
The patent introduces an intermediary mechanism (carrier transfer from a second semiconductor structure) to transfer charge carriers into the first semiconductor structure, enabling carrier concentration to exceed traditional doping limits while reducing contact resistance
2Object-affected harmful factors
If carrier concentration is increased to reduce contact resistance, then metal/semiconductor contact resistance is reduced, but traditional doping methods cannot exceed a certain limit
Solution Approach 1:
The patent changes the parameter of carrier concentration by introducing a second semiconductor structure with higher carrier concentration that transfers carriers to the first structure, thereby achieving carrier concentrations that surpass traditional doping method limits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively increases the charge carrier concentration in the first semiconductor material, reducing contact resistance with the metal, while being compatible with traditional doping methods and surpassing the practical limits of carrier concentration.
Implementation Method 1
a second structure of a doped semiconductor material is in contact with the first structure, the second structure transferring charge carriers into the first structure
Data Source
Figure 1a~2b
AI summary
A semiconductor device comprising: i. a first structure (100) made of a first doped semiconductor material of a first doping type, ii. a metal (300) in contact with the first structure (100), and iii. at least a second structure (200) made of a second doped semiconductor material of the first doping type in contact with the first structure (100), wherein a band off-set for majority charge carriers between the first doped semiconductor material and the second doped semiconductor material is sufficiently large for charge carriers from the second doped semiconductor material to be transferred into the first doped semiconductor material.