Semiconductor Cavity Sloped Sidewall 3D Mapping
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Solution Overview
Problem
Current miniature optical projection modules for consumer devices face challenges in size reduction and integration due to their complex structure, which hinders their miniaturization and efficiency in applications like 3D mapping.
Innovation Solution
A semiconductor structure with a substrate having a cavity with a sloped sidewall and a light source emitting from the sidewall, combined with a diffractive optical element and conductive layers, allows for a compact optical pattern projector design that reduces vertical thickness while maintaining light diameter expansion, enabling efficient 3D mapping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a conventional optical projection module structure is used, then the module can project light patterns, but the device size and integration complexity increase
Solution Approach 1:
The patent merges the light source, cavity structure, and diffractive optical element into a single integrated semiconductor device. The light source is positioned within a cavity formed in the substrate, and the DOE is formed over the substrate, creating a compact unified structure that reduces overall module size while maintaining functionality.
Solution Approach 2:
The patent utilizes the vertical dimension by forming a cavity recessed from the top surface toward the bottom surface of the substrate. This three-dimensional arrangement allows the light source to be positioned below the DOE plane, enabling light to travel vertically through the DOE and reducing the horizontal footprint of the device.
2Ease of manufacture
If the cavity sidewall is made vertical, then manufacturing is simpler, but light reflection efficiency toward the DOE decreases
Solution Approach 1:
The patent changes the geometric parameter of the cavity sidewall from vertical to sloped. This angular modification optimizes the reflection path of light emitted by the source, directing it more effectively toward the DOE. The sloped sidewall acts as a reflective surface that redirects light at appropriate angles to ensure efficient coupling with the diffractive optical element.
3Ease of operation
If the light source emits from the top surface, then alignment with DOE is easier, but vertical thickness increases
Solution Approach 1:
The patent repositions the light source emission direction from the top surface to the sidewall of the cavity. This spatial reconfiguration allows light to be emitted horizontally from the sidewall and then reflected by the sloped cavity wall toward the DOE, which is positioned above. This arrangement reduces the vertical distance required compared to a top-emitting configuration while still achieving proper alignment through the reflective geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor structure achieves a compact and efficient optical pattern projector that reduces device size and enhances integration, improving the miniaturization and performance of consumer electronic devices for 3D mapping applications.
Implementation Method 1
the sloped surface reflects the incident light to generate a reflected light toward the DOE
Implementation Method 2
a diffractive optical element (DOE) over the top surface of the substrate
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes: a substrate having a cavity recessed from a top surface of the substrate toward a bottom surface of the substrate opposite to the top surface, wherein the cavity has a sidewall and a bottom surface, and the bottom surface of the cavity is substantially parallel to the top surface of the substrate; a light source structure in the cavity, and the light source structure emitting a light from a sidewall of the light source structure; and a diffractive optical element (DOE) over the top surface of the substrate; wherein the sidewall of the cavity is a sloped surface, so that when the light is incident on the sidewall, the sloped surface reflects the incident light to generate a reflected light toward the DOE. Associated semiconductor structure and manufacturing method are also disclosed.