Semiconductor Package Cavity Design for Lamination Stress Relief
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Solution Overview
Problem
Semiconductor device packages face issues with cracking of the semiconductor die during the lamination process of insulating materials, which affects the integrity and reliability of the package.
Innovation Solution
A semiconductor device package design featuring a conductive base with a cavity to house the semiconductor die, using a conductive adhesive layer and a protection layer to minimize stress and prevent cracking, along with a specific arrangement of the semiconductor die and adhesive layer thickness to control the lamination process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulating material is laminated to cover and protect the semiconductor die and leadframe, then the semiconductor device package gains protection and structural integrity, but the semiconductor die may crack during the lamination process
Solution Approach 1:
The patent applies beforehand cushioning by designing a cavity structure in the conductive base that accommodates the semiconductor die with appropriate spacing. The cavity depth is controlled to be between 0.05-0.15 times the thickness of the insulating material, creating a buffer zone that absorbs lamination stress before it reaches the die, thereby preventing cracks while maintaining package protection
Solution Approach 2:
The patent changes the physical parameters of the package structure by introducing a controlled cavity depth parameter and specifying the distance between the die and the insulating material surface. This parameter optimization allows the lamination process to proceed without causing die cracking, resolving the contradiction between package protection and die integrity
2Device complexity
If the semiconductor die is bonded directly to the bottom surface of the cavity, then the package structure is simplified, but stress concentration may occur during lamination causing die cracking
Solution Approach 1:
The patent applies local quality by creating a specific cavity geometry with controlled depth and positioning the semiconductor die at an optimized distance from the insulating material surface. This localized structural modification provides stress distribution exactly where needed (at the die-insulating material interface) without complicating the overall package structure
3Volume of moving object
If the distance between the semiconductor die and the insulating material is reduced, then the package size is minimized, but stress during lamination increases causing die cracking
Solution Approach 1:
The patent optimizes the distance parameter between the semiconductor die and the insulating material surface, setting it to between 0.05-0.15 times the insulating material thickness. This parameter optimization achieves the minimum safe distance that prevents die cracking while minimizing package size
Data Source
AI summary
A semiconductor device package includes a conductive base, and a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth. A semiconductor die is disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface. The second surface of the semiconductor die is bonded to the bottom surface of the cavity. A distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity.