Semiconductor Support Structure With Cavities for Low-Parasitic Interconnects
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Solution Overview
Problem
In semiconductor manufacturing, the reduction of feature size in MOS devices under high-K metal gate (HKMG) and fin transistor (Finfet) processes leads to issues such as short circuits and parasitic capacitance between metal wires, which affect the operation speed and power consumption of MOS devices.
Innovation Solution
A semiconductor structure is designed with support structures that include a support layer and a cavity between conductive structures, reducing parasitic capacitance and preventing short circuits by acting as a protection layer and mitigating structural deformation due to stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If metal wires are used as connection medium to reduce power consumption, then power consumption is reduced, but short circuit between adjacent metal wires occurs and parasitic capacitance increases
Solution Approach 1:
The patent introduces a support structure as an intermediary element positioned between adjacent conductive structures. This support structure includes a cavity that physically separates the conductive structures, preventing direct contact and short circuits while maintaining the low-resistance metal wire connection for power reduction
Solution Approach 2:
The support structure is segmented into multiple components including a first support layer, second support layer, and cavity. This segmentation allows the structure to provide mechanical support while creating physical separation between conductive elements, thereby preventing short circuits
2Speed
If metal wires are used as connection medium to improve operation speed, then operation speed is increased, but parasitic capacitance between adjacent metal wires increases
Solution Approach 1:
The support structure acts as an intermediary that reduces the coupling between adjacent conductive structures. The cavity within the support structure creates physical separation, thereby reducing parasitic capacitance while maintaining the low-resistance connection needed for high-speed operation
Solution Approach 2:
The support structure extends in the vertical dimension (along the thickness direction of the base) to provide separation between conductive structures. By utilizing the vertical dimension for structural support, the horizontal spacing between conductive elements is increased, reducing parasitic capacitance
3Reliability
If support structures are added to prevent short circuits and reduce parasitic capacitance, then reliability is improved, but device complexity increases
Solution Approach 1:
The support structure serves multiple functions simultaneously: it provides mechanical support to prevent structural deformation, creates physical separation to prevent short circuits, and reduces parasitic capacitance through cavity formation. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity
4Stability of the object's composition
If support structures with cavities are formed to withstand structural deformation, then structural stability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The support structure is formed preliminarily during the manufacturing process before final device assembly. The cavity structure is created in advance using deposition and etching processes, allowing the structure to withstand subsequent process stresses without requiring high precision during later manufacturing steps
Data Source
AI summary
Embodiments of the present disclosure relate to the field of semiconductor structures, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base; a plurality of first conductive structures, located on a surface of the base and distributed at intervals along a first direction; a plurality of second conductive structures, located on the surface of the base, and the plurality of second conductive structures and the plurality of first conductive structures being arranged alternately; and a plurality of support structures, located on the surface of the base and a given one of the plurality of support structures being located between a given one of the plurality of first conductive structures and a given one of the plurality of second conductive structures.