Semiconductor Cell Height Reduction via Non-Integer Wiring Pitch
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing design of semiconductor integrated circuit devices restricts the minimum size of standard cells due to the requirement that cell height must be an integer multiple of the wiring pitch, limiting further microfabrication and integration density.
Innovation Solution
The cell height is set to (an integer+0.5) or (an integer+0.25) times the second-layer wiring pitch, allowing for a non-integer multiple configuration that reduces the size of standard cells while maintaining wiring consistency, thereby increasing integration density and reducing the cell array area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the cell height is set to an integer multiple of the wiring pitch, then wiring consistency is improved, but the cell size cannot be reduced further
Solution Approach 1:
The patent changes the cell height parameter from an integer multiple of wiring pitch to a non-integer multiple (specifically 6.5 times the wiring pitch), enabling further cell size reduction while maintaining wiring consistency through adjusted tap positioning and wiring routing
2Productivity
If the cell height is reduced below integer multiple of wiring pitch, then integration density is improved, but wiring consistency deteriorates
Solution Approach 1:
The patent adopts a cell height of 6.5 times the wiring pitch (non-integer multiple), which increases integration density while maintaining wiring consistency through compensated tap positioning and adjusted wiring routing strategies
Solution Approach 2:
The patent adjusts the vertical positioning of taps relative to the reduced cell height, using the second direction (vertical) to compensate for the non-integer cell height, thereby maintaining wiring consistency across cell boundaries
Data Source
AI summary
A semiconductor integrated circuit device with reduced cell size including a first tap formed in a first direction to supply a power-supply potential, a second tap formed in the first direction to supply a power-supply potential and positioned to confront the first tap in a second direction intersecting the first direction, and a standard cell formed between the first and second taps, a cell height (distance) between the center of the first tap and that of the second tap both in the second direction set to ((an integer+0.5)×a wiring pitch of the second-layer wiring lines) or (an integer+0.25×a wiring pitch of the second-layer wiring lines.


