Semiconductor Cell Layout Overlap for Height Reduction
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Solution Overview
Problem
Current design rules for semiconductor devices result in inefficient use of space due to strict constraints on pattern overlap, leading to wasted space and reduced cell density in layout diagrams, particularly in the placement of gate patterns and fin patterns.
Innovation Solution
Allowing gate patterns to overlap and electrically couple with straddling fin patterns, thereby reducing the height of cells and improving cell density, while maintaining electrical isolation through strategic placement and abutment of cells in layout diagrams.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If strict constraints on pattern overlap are imposed according to current design rules, then electrical isolation is maintained, but space utilization efficiency deteriorates and cell density is reduced
Solution Approach 1:
The patent applies local quality by allowing gate patterns to overlap with fin patterns in specific localized regions (the border region between adjacent cells) while maintaining non-overlapping configurations in other critical areas. This selective overlap approach enables space optimization without compromising overall electrical isolation, as the overlap is confined to regions where electrical coupling is acceptable or controlled.
Solution Approach 2:
The patent merges the gate pattern of one cell with the fin pattern of an adjacent cell in the border region, allowing these patterns to overlap and electrically couple. This merging eliminates wasted space between cells and reduces overall cell height, while the strategic placement ensures that such merging occurs only where it does not harm electrical isolation between functional blocks.
2Area of stationary object
If gate patterns are allowed to overlap with fin patterns, then cell density is improved and space is reduced, but electrical isolation may be compromised
Solution Approach 1:
The patent segments the cell structure into distinct regions: an interior region where strict non-overlapping rules apply to maintain electrical isolation, and a border region where controlled overlap is permitted. This segmentation allows the design to simultaneously achieve space optimization in the border region while preserving electrical isolation in the interior regions where functional blocks are separated.
Solution Approach 2:
The border region acts as an intermediary zone between adjacent cells, allowing controlled interaction (overlap) between gate and fin patterns. This intermediary region serves as a buffer that enables space optimization while preventing harmful electrical coupling between functional blocks, as the overlap is confined to non-critical areas.
3Reliability
If conservative placement of gate and fin patterns is used, then electrical isolation is ensured, but layout density and packing efficiency are reduced
Solution Approach 1:
The patent introduces dynamic flexibility into the placement rules by allowing conditional overlap in border regions while maintaining strict separation in interior regions. This dynamic approach enables the layout to adaptively optimize space utilization without sacrificing electrical isolation, as the overlap permission is applied selectively based on location rather than uniformly across the entire cell structure.
Data Source
AI summary
A semiconductor device including: first, second and third active regions a first gate structure over the first active region and a first part of the second active region; a second gate structure over the third active region and a second part of the second active region; a first cell region including the first gate structure, the first active region and the first part of the second active region; a second cell region including the second gate structure, the third active region and the second part of the second active region; a first border region representing an overlap of the first and second cell regions which is substantially aligned with an approximate midline of the second active region; the second gate structure overlapping the first border region; and there being a first gap which is between the first gate structure and the first border region.