Semiconductor Cell Active-Zone Offset for Flexible Routing

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The miniaturization of integrated circuits (ICs) leads to restricted layout design rules for horizontal routing tracks and via connectors, limiting the number of available tracks and connector positions due to strict design rule restrictions, especially when p-type and n-type active zones are not offset, resulting in design rule violations.

Innovation Solution

Introducing an offset between p-type and n-type active zones, allowing for increased flexibility in routing by relaxing design rule restrictions on via connector positions, thereby enabling more routing options and reducing cell width in semiconductor cell structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If p-type and n-type active zones are aligned without offset, then manufacturing simplicity is maintained, but routing flexibility deteriorates due to design rule restrictions on via connector positions

Engineering Contradiction:
Improvealignment simplicityVSAvoidrouting flexibility
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent applies asymmetry by intentionally offsetting the p-type and n-type active zones from perfect alignment. This asymmetric positioning creates non-overlapping regions that provide additional space for via connectors and routing tracks, thereby improving routing flexibility while maintaining manufacturing feasibility through controlled offset distances

Inventive Principle:
Principle #4Asymmetry

2Adaptability or versatility

If active zones are offset to increase routing flexibility, then via connector positioning options improve, but manufacturing precision requirements worsen due to tighter design rule restrictions

Engineering Contradiction:
Improvevia connector positioning optionsVSAvoiddesign rule compliance
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent employs parameter changes by systematically varying the offset distance between p-type and n-type active zones. By optimizing this parameter within specific ranges, the design achieves sufficient routing flexibility while maintaining compliance with manufacturing design rules, thus balancing via connector positioning options with manufacturing precision requirements

Inventive Principle:
Principle #35Parameter changes

3Length of moving object

If cell width is reduced for miniaturization, then IC size decreases, but routing track availability worsens due to limited space for horizontal routing tracks

Engineering Contradiction:
Improvecell widthVSAvoidrouting track availability
Core Design Contradiction:
Length of moving objectVSAdaptability or versatility

Solution Approach 1:

The patent applies dimensionality change by utilizing the vertical dimension (offset direction) to create additional routing space. By offsetting active zones vertically, the invention generates non-overlapping regions that accommodate via connectors and routing tracks without increasing cell width, thus maintaining miniaturization while improving routing track availability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11855068B2Active zones with offset in semiconductor cell
Publication Date: 2023.12.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11855068B2 patent drawing
  • US11855068B2 patent drawing
  • US11855068B2 patent drawing

AI summary

A semiconductor cell structure includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail. Each of the first-type active zone and the second-type active zone is between a first alignment boundary and a second alignment boundary extending in a first direction which is perpendicular to a second direction. A first distance along the second direction between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance along the second direction between the long edge of the second power rail and the first alignment boundary of the second-type active zone by a predetermined distance.