Semiconductor Cell Tap Conductivity Conversion for Well Potential Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor integrated circuit designs face challenges in efficiently converting cells with power-supply potential taps to cells that can supply any well potential, leading to increased design burden and chip area usage.
Innovation Solution
A method and apparatus that convert the conductivity type of taps in semiconductor integrated circuit devices to match that of source diffusion regions, allowing for the free setting of well potentials, and utilize cell library resources effectively by replacing taps with source diffusion regions and providing separate taps for well potential supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If taps are placed within cells or tap cells are disposed between cell rows to control well potential, then well potential control is achieved, but device complexity and chip area increase
Solution Approach 1:
The patent merges the tap structure with the source diffusion region by making them identical in conductivity type. This combination eliminates the need for separate tap structures within cells or between cell rows, reducing device complexity while maintaining well potential control functionality through the unified diffusion region structure.
Solution Approach 2:
The diffusion region serves dual functions: it acts as both the source diffusion region for the MOS transistor and the tap for well potential control. This multi-functionality eliminates the need for dedicated tap structures, reducing chip area and device complexity while achieving reliable well potential control.
2Reliability
If separate taps are provided for well potential supply, then well potential control is achieved, but chip area and interconnect requirements increase
Solution Approach 1:
The patent combines the tap function with the source diffusion region, eliminating the need for separate tap structures and their associated contacts and interconnects. This merging reduces chip area while maintaining well potential control through the integrated diffusion region structure.
Solution Approach 2:
The diffusion region performs multiple functions including serving as the source region for the MOS transistor and providing well potential control through its tap function. This multi-functionality eliminates the need for additional separate structures, reducing chip area and interconnect requirements.
3Adaptability or versatility
If cells are converted to supply any well potential, then design flexibility is improved, but design burden increases
Solution Approach 1:
The patent enables flexible well potential control by changing the conductivity type parameter of the diffusion region to match the desired well potential requirements. This parameter change approach allows cells to be adapted for different well potential configurations without requiring complete redesign, reducing design burden while improving flexibility.
Data Source
AI summary
Disclosed are a design method and apparatus in which information regarding a cell is input, the cell having taps in a substrate surface, for supplying the potentials of respective ones of wells in which active elements are formed, and source diffusion regions in the substrate surface, conductivity types thereof being opposite those of the wells. The taps are converted to conductivity types identical with those of the source diffusion regions to obtain source regions and freely set the well potentials of the cell to any potentials. If the cell is one having shorting portions electrically connecting taps and sources and the shorting portions are diffusion regions of the same conductivity type as that of the taps, then the shorting portions are converted to conductivity types identical with those of the source diffusion regions to obtain source regions.