Semiconductor Die IR Drop Reduction via Center Pad Array
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Solution Overview
Problem
Conventional semiconductor devices experience unacceptable voltage (IR) drops due to high resistance in long wirings from edge-mounted terminals, with existing solutions like increasing metal layers or using flip chip technology being costly or ineffective.
Innovation Solution
A semiconductor device with a semiconductor die featuring a passivation layer and conducting medium layer to connect pads, reducing IR drops through optimized pad arrangement and conducting medium distribution, along with a fabricating method that includes forming pads, openings, and a conducting medium layer to address IR drop issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If terminals are arranged along the edge of the semiconductor die, then the device structure is simple and manufacturing is easier, but the wiring length increases leading to high resistance and unacceptable IR drops
Solution Approach 1:
The patent transitions from a two-dimensional edge arrangement of terminals to a three-dimensional configuration by placing multiple pads at the center of the semiconductor die surface. This dimensional change allows power and ground connections to be established directly at the center without requiring long traversals across the die surface, thereby reducing resistance and IR drops while maintaining manufacturing simplicity.
Solution Approach 2:
The patent applies local quality by concentrating multiple pads (power pads and ground pads) at the specific location of the die center, rather than uniformly distributing terminals along the edge. This localized concentration of conductive elements at the center creates low-resistance pathways for power and ground connections, improving voltage stability in the critical center region where long wirings would otherwise cause significant IR drops.
2Reliability
If metal layers are increased to decrease overall resistance, then IR drops are reduced, but manufacturing cost increases significantly
Solution Approach 1:
The patent employs a cost-effective approach by using a conducting adhesive layer instead of adding multiple expensive metal layers. The conducting adhesive serves as a low-cost conductive medium that fills the openings and provides sufficient electrical connectivity to reduce IR drops, avoiding the need for additional metal deposition processes that would significantly increase manufacturing cost.
Solution Approach 2:
The patent changes the material parameter from traditional metal interconnects to a conducting adhesive medium. This parameter change allows achieving the required electrical conductivity for reducing IR drops using a different material class that is more cost-effective and can be applied through simpler manufacturing processes such as dispensing and curing, rather than requiring complex metal layer deposition.
3Reliability
If metal thickness is increased to decrease overall resistance, then IR drops are slightly reduced, but the effect is minimal and manufacturing complexity increases
Solution Approach 1:
The patent replaces the approach of increasing metal thickness with a conducting adhesive layer that provides adequate conductivity without requiring thick metal deposits. The conducting adhesive achieves the necessary electrical performance through its material properties and configuration, avoiding the need to increase metal layer thickness and the associated manufacturing complexity.
Solution Approach 2:
The patent uses a composite structure combining the semiconductor die material with a conducting adhesive medium. This composite approach leverages the advantages of both materials: the semiconductor die provides the active devices and standard interconnects, while the conducting adhesive provides additional low-resistance pathways for power and ground connections, achieving IR drop reduction without modifying the existing metal layer structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces IR drops in semiconductor devices while being cost-effective, as the conducting adhesive layer used is a low-cost medium for electricity conduction and thermal heat relief.
Implementation Method 1
The first conducting medium layer is formed on the first surface area, and utilized for fulfilling the plurality of first openings to connect the plurality of first pads
Data Source
AI summary
The present invention provides a semiconductor device capable of eliminating voltage (IR) drop of a semiconductor die inside the semiconductor device and a fabricating method of the semiconductor device. The semiconductor device comprises the semiconductor die, and the semiconductor die comprises a first surface area, a plurality of first pads potentially equivalent to each other, a passivation layer, a plurality of first openings, and a first conducting medium layer. The passivation layer is disposed on the plurality of first pads. The plurality of first openings is formed on the passivation layer, and utilized for exposing the plurality of first pads. The first conducting medium layer is formed on the first surface area, and utilized for fulfilling the plurality of first openings to connect the plurality of first pads.