Semiconductor Ceramic Spark Plug Insulator for Extreme Thermal Shock

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Solution Overview

Problem

Semiconductor ceramic spark plugs used in turbomachine engines face short service life and poor reliability due to extreme thermal shocks, high temperatures, and oxidizing atmospheres, which degrade their electrical properties and increase porosity, making them unsuitable for increasingly extreme temperature and pressure conditions in combustion chambers.

Innovation Solution

A semiconductor ceramic composition consisting of 5 to 40% electrically conducting phase and 60 to 95% electrically insulating phase, with specific particle size and distribution, allowing for a controlled transition from insulating to conductive state through tunnel effect conduction, reducing leakage current and maintaining conductivity independent of temperature, using materials like MoSi2 and Al2O3, and manufacturing processes such as sintering to achieve a porosity of less than 10%.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If semiconductor ceramic spark plugs use traditional Sialon and SiC materials with high porosity (around 15%), then they can facilitate gas-phase medium breakdown through micro-discharges, but they suffer from short service life and poor reliability due to rapid degradation from thermal shocks, high temperatures, and oxidizing atmospheres

Engineering Contradiction:
Improveservice lifeVSAvoiddegradation from thermal shocks and oxidation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies composite materials by combining conductive particles (such as SiC, MoS2, or metal oxides) with an insulating ceramic matrix (such as Al2O3, Si3N4, or mullite). This composite structure allows the material to simultaneously exhibit controlled electrical conductivity for spark generation and high resistance to thermal shocks and oxidation, thereby improving service life and reliability under extreme combustion chamber conditions.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the electrical conductivity parameter of the ceramic material by controlling the size, concentration, and distribution of conductive particles within the insulating matrix. By adjusting these parameters, the material transitions from being purely insulating to having controlled semiconductive properties, enabling it to withstand extreme temperatures and pressures while maintaining functional performance for spark generation.

Inventive Principle:
Principle #35Parameter changes

2Strength

If the ceramic material is made more dense (porosity less than 10%) to improve strength and resistance to wear, then it becomes weaker and more susceptible to premature wear, but reducing porosity below traditional levels eliminates the micro-discharge sites needed for gas breakdown

Engineering Contradiction:
Improvestrength and wear resistanceVSAvoidpremature wear
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The patent utilizes porous materials by incorporating controlled porosity (less than 10%) in the ceramic matrix to provide micro-discharge sites for gas-phase medium breakdown. The porous structure is optimized to maintain sufficient strength and wear resistance while enabling the necessary electrical discharge function for spark generation in combustion chambers.

Inventive Principle:
Principle #31Porous materials

3Power

If SiC is used as the conducting phase to provide good thermal conductivity and high breakdown field, then it dissipates strong electric forces effectively, but it is oxidized at temperatures above 600°C, distorting electrical properties and significantly impairing conductivity

Engineering Contradiction:
Improveelectrical conductivity and thermal dissipationVSAvoidoxidation resistance at high temperature
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent employs oxidation-resistant materials (such as MoS2, HfO2, ZrO2, or TiO2) as conductive particles that can withstand high temperatures without oxidizing. These materials maintain their electrical and thermal properties in the harsh combustion chamber environment, replacing traditional SiC that degrades above 600°C, thereby ensuring long-term reliability and consistent performance.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The ceramic maintains insulating properties until a specific voltage threshold, then conducts with minimal leakage, enhancing durability and reliability under extreme conditions, suitable for high-energy low-voltage spark plugs, and reducing the need for open porosity in the material.

Implementation Method 1

the distance between two adjacent particles in the conducting phase being between 30 Angström and 5 μm... such a microstructure enables conduction by the tunnel effect

Methodology Applied
Scientific EffectTunnel effect:

Implementation Method 2

SiC is a semiconductor with a wide bandgap and a large breakdown field (2 MV·cm−1) combined with good thermal conductivity, which renders it a material of choice for dissipating strong electric forces

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

SiC is oxidised at temperatures above 600° C., which distorts the electrical properties of the material and significantly impairs its electrical conductivity

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS9115030B2Semiconductor ceramic
Publication Date: 2015.08.25 DRAZENOVIC BEATRICE
  • US9115030B2 patent drawing

AI summary

A semiconductor ceramic including a microstructure including 5 to 40% by volume of a particulate conducting phase, and 60 to 95% by volume of a particulate insulating phase, a size of the particles of the conducting phase being between 5 nm and 11 μm, 65 to 80% of the particles of the conducting phase having an average diameter smaller than 1 μm, and 20 to 35% of the conducting particles having an average diameter between 1 and 11 μm, and a distance between two adjacent particles of the conducting phase being between 30 Angström and 5 μm.