Semiconductor Processing Chamber Cleaning Gas Control
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Solution Overview
Problem
In semiconductor device manufacturing, by-products and particles adhere to the substrate mounting table and processing chamber walls, leading to substrate quality deterioration, necessitating frequent chamber cleaning.
Innovation Solution
A substrate processing method and apparatus that control the amount and density of cleaning gas in each gas supply region of the processing chamber, allowing for effective cleaning without substrates mounted, using a gas supply unit and control system to manage processing and cleaning gases separately during film formation and cleaning modes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrate processing continues with the processing chamber having by-products adhered thereto, then productivity is maintained, but substrate quality deteriorates due to by-product adherence
Solution Approach 1:
The patent performs cleaning of the processing chamber before substrate processing to prevent by-product adherence. By proactively removing by-products from the chamber walls and mounting table before new substrates are processed, the system ensures high substrate quality while maintaining continuous productivity. The cleaning step is integrated into the processing cycle, executing preliminary maintenance actions that prevent quality deterioration.
2Manufacturing precision
If frequent chamber cleaning is performed to maintain substrate quality, then manufacturing precision is improved, but productivity decreases due to processing time loss
Solution Approach 1:
The patent applies partial cleaning action by targeting specific regions where by-products accumulate (chamber walls and mounting table) rather than performing a complete chamber overhaul. The cleaning gas is supplied to specific gas supply regions corresponding to by-product accumulation zones, achieving sufficient cleaning效果 with reduced cleaning time and resource consumption, thus balancing substrate quality with processing efficiency.
Solution Approach 2:
The cleaning process is integrated periodically into the substrate processing cycle. Instead of separate frequent cleaning operations, the system performs cleaning at predetermined intervals between substrate batches, using controlled gas supply to remove by-products. This periodic integration minimizes disruption to continuous processing while maintaining substrate quality standards.
3Reliability
If cleaning gas is supplied uniformly across all regions, then cleaning effectiveness is improved, but gas consumption increases
Solution Approach 1:
The patent implements localized cleaning gas supply by dividing the processing chamber into multiple gas supply regions and controlling cleaning gas flow to specific regions where by-products accumulate. Rather than uniform distribution, the system targets cleaning gas to areas with highest by-product concentration (chamber walls and mounting table regions), achieving effective cleaning with optimized gas consumption by applying cleaning action only where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-quality film formation while maintaining chamber cleanliness, preventing by-product adherence and ensuring consistent substrate quality by efficiently managing gas supplies during both processing and cleaning cycles.
Implementation Method 1
performing cleaning by, for each of the gas supply regions, controlling an amount and a density of a cleaning gas
Implementation Method 2
supplying a cleaning gas into the processing chamber in a state where the substrate is not mounted on the substrate mounting member
Data Source
AI summary
A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.