Semiconductor Chamber Cleaning via Sequential Temperature Gas
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Solution Overview
Problem
In semiconductor device manufacturing, the existing cleaning methods using fluorine gas or fluorine-diluted gases for removing thin films from processing chambers at low temperatures are inefficient, leading to prolonged processing times and uneven etching damage to quartz components.
Innovation Solution
A cleaning method involving the sequential supply of fluorine-based and nitrogen oxide-based gases, or their dilutions with inert gases, at different temperatures to facilitate thermochemical reactions for efficient removal of thin films and extraneous materials within the processing chamber, thereby reducing processing time and preventing quartz damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine gas or fluorine-diluted gas is supplied at low temperature to remove thin film, then the quartz member is protected from excessive etching damage, but the time required to remove the thin film is lengthened
Solution Approach 1:
The cleaning process is divided into multiple sequential steps with different temperature conditions. The first step uses low temperature to protect quartz, while subsequent steps use higher temperatures to accelerate thin film removal, thereby segmenting the conflicting requirements of quartz protection and efficient cleaning
Solution Approach 2:
The temperature parameter is dynamically changed during the cleaning process. The process transitions from a first temperature condition (protecting quartz) to a second temperature condition (accelerating thin film removal), resolving the contradiction by applying different parameter settings at different stages
2Manufacturing precision
If fluorine gas is supplied at low temperature to remove thin film, then selectivity for thin film etching is maintained, but the overall cleaning efficiency is reduced
Solution Approach 1:
The cleaning process is segmented into distinct phases: an initial low-temperature phase that maintains high etching selectivity for the thin film, followed by higher-temperature phases that improve overall cleaning efficiency without compromising the selective removal of the target film
Solution Approach 2:
Temperature parameters are changed sequentially during the cleaning process. The process begins with low temperature to ensure selective thin film etching, then transitions to higher temperatures to enhance cleaning efficiency, thus resolving the contradiction between precision and productivity
3Device complexity
If fluorine gas is supplied unilaterally to remove thin film, then the process is simple, but uneven etching damage occurs on the quartz member
Solution Approach 1:
The cleaning process is segmented into multiple steps with varying gas compositions and temperature conditions. This segmentation allows the process to maintain relative simplicity while achieving uniform quartz surface treatment by combining different gas supply patterns and temperature profiles
Solution Approach 2:
Multiple parameters including temperature, gas composition, and flow rates are changed sequentially during the cleaning process. These parameter changes enable uniform etching of the quartz surface while maintaining process simplicity through a structured multi-step approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required to remove thin films and prevents uneven etching damage to quartz components, enhancing the efficiency and productivity of semiconductor device manufacturing by optimizing the etching process.
Implementation Method 1
supplying a fluorine-based gas and a nitrogen oxide-based gas or a fluorine-based gas and a nitrogen oxide-based gas diluted with an inert gas, as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit, including the thin film deposited on a surface of a member in the processing chamber, by a thermochemical reaction
Implementation Method 2
supplying a fluorine-based gas and a nitrogen oxide-based gas or a fluorine-based gas and a nitrogen oxide-based gas diluted with an inert gas, as the cleaning gas, into the processing chamber heated to a first temperature
Data Source
AI summary
A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.