Semiconductor Device Chamfered Electrode Terminals
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Solution Overview
Problem
Semiconductor devices face dielectric breakdown and discharging issues due to sharp angles between electrode terminals covered by resin, limiting their withstanding voltage.
Innovation Solution
The semiconductor device incorporates chamfered portions on the end surfaces of electrode terminals, reducing electric field concentration and enhancing the creepage distance with a resin covering, thereby increasing the withstanding voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrode terminals are covered by resin with sharp angles, then the device structure is simple and easy to manufacture, but dielectric breakdown and discharging occur due to electric field concentration at corner areas
Solution Approach 1:
The patent applies chamfered portions with rounded corners (curved surfaces) at the end surfaces of electrode terminals instead of sharp angles. This curvature design reduces electric field concentration at corner areas, preventing dielectric breakdown and discharging, thereby improving the withstanding voltage of the semiconductor device while maintaining manufacturing feasibility.
2Reliability
If chamfered portions are formed on electrode terminals, then electric field strength at corner areas is reduced and withstanding voltage increases, but the manufacturing process becomes more complex
Solution Approach 1:
The patent modifies the geometric parameters of electrode terminals by introducing chamfered portions with specific dimensions (e.g., rounded corner radius, chamfer depth). These parameter changes reduce electric field concentration while maintaining compatibility with standard manufacturing processes, balancing improved reliability with ease of manufacture.
3Reliability
If sharp-angled electrode terminals are used, then the creepage distance is shorter and device size is reduced, but electric field concentration causes dielectric breakdown
Solution Approach 1:
By replacing sharp angles with chamfered rounded portions at the end surfaces of electrode terminals, the patent increases the creepage distance along the resin surface while reducing electric field concentration. This curvature design allows the electric field to distribute more evenly, preventing dielectric breakdown without requiring a proportional increase in overall device size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The chamfered design significantly reduces electric field strength at corner areas, leading to a substantial increase in the semiconductor device's withstanding voltage, as demonstrated by simulations and breakdown voltage tests.
Implementation Method 1
a chamfered portion is formed on at least one of end portions where the first electrode terminal and the second electrode terminal face each other
Data Source
AI summary
A semiconductor device includes: a first electrode terminal; a second electrode terminal; a semiconductor element having an electrode on one surface connected to one surface of the first electrode terminal; a wire that connects an electrode on the other surface of the semiconductor element and the second electrode terminal; and a resin portion formed of an insulator covering the semiconductor element, a part of the second electrode terminal, and the one surface of the first electrode terminal, wherein a chamfered portion is formed on at least one of end portions where the first electrode terminal and the second electrode terminal face each other.