Semiconductor Device Channel Layer Asymmetry for Memory Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration density of three-dimensional memory cell arrays due to limitations in the arrangement and structure of channel layers and stack structures, which affect the efficiency and density of memory cell placement.
Innovation Solution
The semiconductor device incorporates a cell stack structure with first and second channel layers penetrating the stack structure, where the second channel layers overlap with the first channel layers and are biased to one side, allowing for a dense arrangement and improved integration by forming slits that isolate upper stack structures and channel layers, optimizing the placement of memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If channel layers are arranged in a conventional grid pattern, then the structure is simple to manufacture, but the integration density of memory cells is limited
Solution Approach 1:
The patent applies asymmetry by offsetting the second channel layers relative to the first channel layers. Specifically, the second channel layers are positioned to overlap only partially with the first channel layers, creating an asymmetric arrangement that increases the number of memory cells per unit area while maintaining manufacturability through standardized fabrication processes
2Manufacturing precision
If upper stack structures are continuously arranged without isolation, then the manufacturing process is simpler, but the control over channel layer positioning and electrical isolation is reduced
Solution Approach 1:
The patent applies segmentation by introducing upper slits that divide the upper stack structures into isolated segments. These slits create physical and electrical isolation between adjacent upper stack structures, enabling precise positioning control of channel layers while maintaining manageable manufacturing complexity through modular structure design
Data Source
AI summary
A semiconductor device includes a second channel layer in a first column and a second channel layer in a second column disposed biased to one side of a first channel layer in a first column and a first channel layer in a second column, respectively. The one side of the first channel layer in the first column and the one side of the first channel layer in the second column face directions opposite to each other.