Semiconductor Device Structure with Channel Barrier
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at smaller sizes due to increased complexity and difficulty in fabrication processes as feature sizes decrease, leading to issues with device performance and reliability.
Innovation Solution
The process involves forming extended source structures below channel layers and raised drain structures, with spacer elements creating a channel barrier to reduce capacitance coupling and enhance current driving/tunneling, thereby improving device performance and reducing leakage currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then production efficiency is improved and costs are lowered, but fabrication process complexity and difficulty increase
Solution Approach 1:
The device is segmented into distinct functional regions including raised drain structures, channel barrier regions, and extended source structures. This segmentation allows each region to be optimized independently for its specific function while maintaining overall device performance at scaled dimensions
Solution Approach 2:
The invention introduces vertical dimensionality through raised drain structures and channel barrier regions that extend beneath the gate. This third-dimensional approach allows functional differentiation without requiring proportional increases in lateral feature sizes, thereby managing fabrication complexity while maintaining scaling benefits
2Area of stationary object
If source and drain structures are positioned closer to increase functional density, then area is reduced, but capacitance coupling between source and drain increases
Solution Approach 1:
A channel barrier region is introduced as an intermediary structure between the extended source structure and the raised drain structure. This channel barrier electrically isolates the source and drain, reducing capacitance coupling and preventing harmful direct interaction between these structures even when positioned in close proximity
Solution Approach 2:
The channel barrier region is extracted as a separate functional element that removes the harmful capacitance coupling effect. By taking out this intermediate region, the patent eliminates the direct electrical path between source and drain while maintaining their spatial proximity for compact device design
3Object-generated harmful factors
If source and drain structures are separated to reduce capacitance coupling, then harmful effects are reduced, but the distance between them increases reducing current driving capability
Solution Approach 1:
The patent resolves this contradiction by moving the separation into the vertical dimension rather than increasing lateral distance. The channel barrier region extends beneath the gate structure, providing electrical isolation in the vertical plane while maintaining close lateral proximity between source and drain, thus preserving current driving capability while reducing capacitance coupling
Data Source
AI summary
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure in a semiconductor substrate. The semiconductor device structure also includes a channel layer over the semiconductor substrate. A first portion of the channel layer covers a portion of the source structure. A second portion of the channel layer laterally extends away from the source structure. The semiconductor device structure further includes a drain structure over the semiconductor substrate. The drain structure and the source structure have different conductivity types. The drain structure adjoins the second portion of the channel layer.