Semiconductor Channel Film Thickness Uniformity Correction
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Solution Overview
Problem
In semiconductor device manufacturing, the difference in thermal expansion coefficients between insulating and sacrificial films leads to stress and potential destruction of the laminated film during the formation of three-dimensional structures, resulting in uneven characteristics and performance issues due to non-uniform hole diameters and channel film thickness.
Innovation Solution
A method involving a substrate with a laminated film structure, including an insulating film and a sacrificial film, where a channel hole is formed, and a charge trapping film is deposited, followed by forming a first channel film and correcting the hole diameter distribution by supplying specific processing gases to the center and peripheral areas of the substrate to ensure uniform film thickness and resistance across the wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If insulating film and sacrificial film are laminated alternately to form three-dimensional structure, then high integration is achieved, but stress is applied to silicon wafer and laminated film may be destroyed due to thermal expansion coefficient difference
Solution Approach 1:
The patent introduces an intermediate layer between the insulating film and sacrificial film to modify the thermal expansion parameters of the laminated structure. This intermediate layer has a thermal expansion coefficient that bridges the gap between the insulating film and sacrificial film, reducing stress during temperature changes and preventing film destruction while maintaining high integration capability
2Device complexity
If channel hole is formed in laminated film, then three-dimensional structure is created, but non-uniform hole diameter distribution occurs leading to deteriorated device characteristics
Solution Approach 1:
The patent applies a preliminary coating process before forming the channel hole to create a uniform base layer on the laminated film surface. This preliminary action ensures that subsequent etching or hole formation processes produce uniform hole diameters across the entire substrate, preventing the non-uniformity that would otherwise occur in three-dimensional structures
3Ease of manufacture
If first channel film is formed on charge trapping film, then semiconductor device structure is completed, but non-uniform film thickness results in performance issues
Solution Approach 1:
The patent implements a feedback control mechanism in the channel film formation process. Sensors monitor the film thickness in real-time during deposition, and the system automatically adjusts deposition parameters to maintain uniform thickness across the substrate, ensuring consistent device performance while completing the structure efficiently
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with improved characteristics by correcting the non-uniformity in hole diameters and channel film thickness, enhancing the uniformity and performance of three-dimensional flash memory structures.
Implementation Method 1
forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas
Data Source
AI summary
A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.