Semiconductor Device Channel Ion Fixing
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Solution Overview
Problem
High-integration semiconductor devices face threshold voltage changes due to Thermal Enhancement Diffusion (TED) of channel ions during the gate-forming process, affecting the electrical characteristics of NMOS and PMOS devices.
Innovation Solution
A method involving thermal treatment of a semiconductor substrate at 770 to 830°C to fix channel ions, followed by forming a High Temperature Oxide (HTO) film and an anti-reflection film, and then etching to create a recess region, thereby stabilizing the threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a PE-TEOS film or TEOS film is formed at 700°C to create an oxide film for the recess gate, then the deposition speed is relatively rapid, but Thermal Enhancement Diffusion (TED) of channel ions occurs causing threshold voltage to change
Solution Approach 1:
The patent applies preliminary action by performing channel ion implantation and thermal treatment at 770-830°C to fix the channel ions before forming the oxide film. This preliminary fixation prevents TED from occurring during subsequent oxide formation processes, thereby maintaining threshold voltage stability while allowing rapid deposition to proceed.
Solution Approach 2:
The patent changes the temperature parameter from the conventional 700°C oxide formation temperature to a higher range of 770-830°C for the channel ion fixing thermal treatment. This parameter change enables the channel ions to be fixed in place before oxide formation, preventing TED-induced threshold voltage shifts while maintaining process efficiency.
2Reliability
If thermal treatment is performed at 770 to 830°C to fix channel ions, then threshold voltage stability is improved, but the process temperature is higher than conventional oxide formation
Solution Approach 1:
The patent performs the high-temperature thermal treatment to fix channel ions as a preliminary step before forming the oxide film. By completing the ion fixation before oxide formation, the higher temperature is only required temporarily during the thermal treatment step, not during oxide deposition, thus achieving threshold voltage stability without permanently increasing process temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents threshold voltage changes, enhancing the electrical characteristics and reliability of semiconductor devices by stabilizing the gate threshold voltage.
Implementation Method 1
subjecting the semiconductor substrate to thermal treatment at a temperature ranging from 770 to 830° C. to fix the channel ions
Implementation Method 2
performing a high-temperature-deposition process at a temperature ranging from 770 to 830° C. to form a HTO film over the semiconductor substrate
Implementation Method 3
partially etching the HTO film and the anti-reflection film to expose a predetermined portion of the semiconductor substrate
Data Source
AI summary
A method for manufacturing a semiconductor device includes subjecting a semiconductor substrate to thermal treatment at a temperature ranging from 770 to 830° C. to fix channel ions then forming a HTO film. The method thereby prevents a threshold voltage of a gate from changing due to diffusion of channel ions.