3D Semiconductor Channel Layer Connection via Segmented Manufacturing
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Solution Overview
Problem
The challenge in manufacturing 3D semiconductor structures is maintaining the desired configuration and connectivity of channel layers on the sidewalls of stacks, which becomes increasingly difficult as the height of the stacks increases, affecting the formation and stability of these structures.
Innovation Solution
A method involving the formation of stacks on a substrate with alternately-stacked conductive and insulating layers, followed by the deposition of memory and channel layers on the sidewalls, and connecting portions that expose the surface of the channel layers to the substrate, ensuring secure connection while maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of the stacks increases to achieve higher density, then the storage capacity increases, but the difficulty of forming and maintaining the desired configuration of channel layers on sidewalls increases
Solution Approach 1:
The method performs preliminary actions by first forming the stacks with conductive and insulating layers, then forming the channel layers on the sidewalls before finally forming the connecting portions. This sequence ensures that the channel layers are properly positioned and configured before the connecting portions are created, making the overall process easier even as stack height increases.
Solution Approach 2:
The manufacturing process is divided into distinct segments: forming stacks, forming channel layers on sidewalls, and forming connecting portions. This segmentation allows each step to be optimized independently, reducing the overall difficulty of manufacturing high-density structures.
2Quantity of substance
If the height of the stacks increases to achieve higher density, then the storage capacity increases, but the stability of the channel layer configuration deteriorates
Solution Approach 1:
The connecting portions act as intermediaries that connect the channel layers to the substrate. This intermediary structure provides mechanical support and stabilizes the channel layer configuration, preventing deterioration even as stack height and storage capacity increase.
Solution Approach 2:
The channel layers are formed on the sidewalls as a preliminary step before forming the connecting portions. This preliminary positioning ensures that the channel layers are correctly configured and stabilized before the final connecting structures are created, maintaining configuration stability throughout the process.
3Reliability
If connecting portions are formed to connect channel layers to substrate, then connectivity is improved, but risk of damaging channel or memory layers increases
Solution Approach 1:
The channel layers and memory layers are formed on the sidewalls as a preliminary step before the connecting portions are created. This preliminary formation ensures that the delicate layers are already in place and protected, reducing the risk of damage when the connecting portions are subsequently formed.
Solution Approach 2:
The manufacturing process segments the formation of channel/memory layers from the formation of connecting portions. This segmentation allows the delicate layers to be formed and stabilized first, then the connecting portions to be formed separately, minimizing the risk of damage while ensuring reliable connectivity.
Data Source
AI summary
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a plurality of stacks, a plurality of memory layers, a plurality of channel layers and a plurality of connecting portions. The stacks are disposed on the substrate. Each of the stacks comprises alternately-stacked conductive layers and insulating layers. The memory layers are disposed on sidewalls of the stacks, respectively. The channel layers are disposed on the memory layers, respectively, wherein each of the channel layers comprises a surface being exposed. The connecting portions connect the surface of each of the channel layers to the substrate, respectively.