Semiconductor Channel with Non-Linear Surfaces for Mobility
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices, particularly fin-type field effect transistors, face challenges in optimizing current flow and performance due to limitations in channel surface geometry and material orientation, which affect mobility and control over current flow between the source and drain regions.
Innovation Solution
The semiconductor device is fabricated with a channel having non-linear surfaces with specific crystal orientations, such as {111} surfaces, and a fin-type field effect transistor structure with multiple surfaces, allowing for improved mobility and control over current flow by forming a channel with angled surfaces and a gate electrode that extends around multiple sides of the channel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional fin-type field effect transistor with linear channel surfaces is used, then the device structure is simple and easy to manufacture, but the mobility and control over current flow are limited
Solution Approach 1:
The channel is formed with non-linear surfaces including curved surfaces such as {111} crystal orientation surfaces, replacing conventional linear planar surfaces. This curvature and specific crystal orientation improve carrier mobility and gate control over the channel, directly addressing the limitation of conventional linear surfaces while maintaining manufacturing feasibility through selective epitaxial growth and etching processes
2Reliability
If the channel surface is modified to have specific crystal orientations like {111}, then mobility improves, but the manufacturing process becomes more complex
Solution Approach 1:
Different regions of the channel are formed with different crystal orientations and surface properties. Specifically, the channel includes {111} oriented surfaces in critical regions to maximize mobility, while other regions maintain conventional orientations. This localized application of specific crystal orientations allows mobility improvement without requiring complete process overhaul
Solution Approach 2:
The substrate is prepared in advance with specific crystal orientations and the channel is formed with predetermined non-linear surfaces before device assembly. Selective epitaxial growth and etching processes are performed beforehand to create the desired channel geometry, simplifying subsequent manufacturing steps while ensuring the mobility-enhancing structure is already in place
Data Source
AI summary
A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.