Semiconductor Charge Carrier Lifetime Reduction for Reverse Recovery Losses
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Solution Overview
Problem
Reverse recovery losses occur in semiconductor devices like RC-IGBTs, bipolar diodes, and MOSFETs during mode commutation, leading to inefficiencies and energy losses due to the reverse recovery of charge carriers.
Innovation Solution
Incorporating charge carrier lifetime reduction means, such as recombination centers induced by irradiation or doping, in parasitic regions to reduce the charge carrier lifetime, thereby minimizing the injection of charge carriers into the drift region and reducing reverse recovery losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If charge carrier lifetime is reduced in parasitic regions, then reverse recovery losses are reduced, but device complexity increases due to additional processing steps
Solution Approach 1:
The patent applies parameter changes by modifying the charge carrier lifetime in parasitic regions through controlled irradiation or doping processes. This changes the physical properties of the semiconductor material to reduce reverse recovery losses while maintaining the overall device structure and functionality.
Solution Approach 2:
The patent extracts or isolates the parasitic regions from the main device structure and applies specific treatments to these regions. By targeting only the parasitic regions for lifetime reduction, the solution addresses the energy loss problem locally without unnecessarily complicating the entire device.
2Loss of energy
If charge carrier lifetime is reduced in the drift region, then reverse recovery losses are reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by differentiating the treatment between parasitic regions and the drift region. The charge carrier lifetime reduction is specifically applied to parasitic regions through targeted irradiation or doping, while the drift region maintains its original properties. This localized approach reduces energy losses without imposing stringent precision requirements across the entire device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of charge carrier lifetime reduction means effectively decreases the concentration of charge carriers in the drift region, resulting in reduced reverse recovery losses and improved operational efficiency during mode commutation.
Implementation Method 1
charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the second conductivity type
Data Source
AI summary
A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.