Semiconductor Charge Storage Gates for Accurate Image Signal Transfer
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Solution Overview
Problem
Conventional semiconductor technologies suffer from low photoelectric conversion efficiency in photoelectric conversion elements, which affects the performance of solid-state imaging devices.
Innovation Solution
A semiconductor element design featuring a first and second modulation gate group, semiconductor region, and storage regions, where different voltages applied to the modulation gate groups control signal charge movement and storage, preventing signal charges from being transferred back to the semiconductor region, thereby improving charge output accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional photoelectric conversion element structure is used, then device simplicity is maintained, but photoelectric conversion efficiency is low
Solution Approach 1:
The photoelectric conversion element is divided into multiple functional regions including a pinned layer with higher doping concentration and a buried layer with lower doping concentration. This segmentation of the semiconductor structure into distinct layers with different properties enhances charge carrier separation and collection efficiency, thereby improving photoelectric conversion efficiency while maintaining manufacturing feasibility through standard semiconductor fabrication processes.
2Ease of operation
If signal charges are allowed to move freely in the semiconductor region, then charge collection is simple, but charge transfer accuracy deteriorates due to back-transfer
Solution Approach 1:
A pinned layer is introduced as an intermediary layer between the light-receiving layer and the buried layer. This pinned layer with higher doping concentration acts as a barrier that prevents signal charges from transferring back to the semiconductor region, thereby improving charge transfer accuracy. The intermediary layer facilitates controlled charge movement while blocking unwanted back-transfer, resolving the contradiction between simple charge collection and accurate charge transfer.
3Measurement precision
If modulation gates are added to control charge movement, then charge output accuracy is improved, but device complexity increases
Solution Approach 1:
Modulation gates are introduced to dynamically control the movement of signal charges between different layers. By applying different voltages to the modulation gates, the potential barriers can be adjusted to facilitate charge transfer in the desired direction while preventing back-transfer. This dynamic control mechanism improves charge output accuracy by enabling precise timing and direction control of charge movement, outweighing the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the accuracy and efficiency of signal charge output by effectively storing and managing signal charges between modulation gates, improving the overall performance of solid-state imaging devices.
Implementation Method 1
in a case that a voltage of the first storage region is higher than the voltage of the first modulation gate, first signal charges remained in the first modulation gate are attracted to the first storage region and are stored in the first storage region. The second storage region is directly connected to each of the second modulation gates, so that in a case that a voltage of the second storage region is higher than the voltage of the second modulation gate, second signal charges remained in the second modulation gate are attracted to the second storage region and are stored in the second storage region
Data Source
AI summary
A semiconductor element, a semiconductor element preparing method, and a solid state imaging apparatus. The semiconductor element comprises: a group of first modulation grids, a group of second modulation grids, a semiconductor region, a first storage region, and a second storage region. The group of first modulation grids and the group of second modulation grids are respectively provided with different voltages, the potential of a signal charge transfer path in the semiconductor region is changed, and signal charges are controlled to move along a second direction; the first storage region is directly connected to the first modulation grids, so that when the voltage of the first storage region is higher than the voltage of the first modulation grids, and the first storage region attracts first signal charges retained in the first modulation grids.