Semiconductor Device Charge Storage Layer Architecture
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Solution Overview
Problem
Current non-volatile semiconductor devices for data storage face challenges in extending the retention time of data stored in the floating gate, which affects device reliability and efficiency.
Innovation Solution
A semiconductor device is designed with a charge storage layer positioned under the channel layer, not overlapping the source and drain regions, utilizing an oxide semiconductor layer and an oxide-nitride-oxide stacking structure or a floating gate, to store induced charges and simplify the device structure while reducing threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a charge storage layer is positioned under the channel layer and does not overlap the source and drain regions, then data storage reliability is improved, but device structure becomes more complex
Solution Approach 1:
The charge storage layer is merged with the channel layer to form an integrated stacking structure. This combination allows the charge storage function to be embedded within the channel formation process, improving data storage reliability while avoiding the need for separate, overlapping source/drain region structures.
Solution Approach 2:
The charge storage layer is positioned in a different spatial dimension (under the channel layer) rather than overlapping the source and drain regions in the same plane. This vertical stacking approach resolves the contradiction by achieving reliable charge storage without increasing lateral device complexity.
2Quantity of substance
If an oxide-nitride-oxide stacking structure is used for charge storage, then charge storage capability is improved, but manufacturing process becomes more difficult
Solution Approach 1:
The charge storage structure is segmented into multiple functional layers (oxide layer, nitride layer, oxide layer) stacked vertically. This segmentation allows each layer to be formed using standard deposition processes, improving charge storage capability while maintaining compatibility with existing manufacturing techniques.
Solution Approach 2:
The oxide-nitride-oxide stacking structure uses composite materials with complementary properties. The oxide layers provide charge storage and the nitride layer provides charge trapping, creating a synergistic structure that enhances charge storage capability while using materials compatible with standard semiconductor fabrication processes.
3Reliability
If the charge storage layer does not overlap the source and drain regions, then threshold voltage is reduced, but device area increases
Solution Approach 1:
The charge storage layer is moved to a vertical position under the channel layer, utilizing the third dimension (depth) rather than expanding in the lateral plane. This dimensional transition reduces threshold voltage while minimizing the increase in device area.
Solution Approach 2:
The charge storage layer is nested within the channel structure, positioned underneath the channel layer. This nesting arrangement allows the charge storage function to be embedded within the existing device footprint, reducing threshold voltage without significantly increasing overall device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances data storage reliability and efficiency by allowing for better charge storage without the need for an additional bottom gate, resulting in a more reliable and simplified semiconductor device architecture.
Implementation Method 1
The charge storage layer may include an oxide-nitride-oxide stacking structure or a floating gate. The semiconductor device according to the present invention may store induced charges in the charge storage layer, thereby achieving the function of data memory.
Implementation Method 2
The tunneling effect and source side injection effect may trap the electrons in the floating gate to achieve the function of data storage.
Implementation Method 3
The tunneling effect and source side injection effect may trap the electrons in the floating gate to achieve the function of data storage.
Data Source
AI summary
The present invention provides a semiconductor device and a method of forming the same, and the semiconductor device includes a first insulating layer, a source and a drain, a stacked structure, a second insulating layer, and a gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed on the first insulating layer, and the stacked structure is also disposed on the first insulating layer, between the source and the drain. The stacked structure includes a charge storage layer and an oxide semiconductor (OS) layer disposed on the charge storage layer. The second insulating layer covers the source, the drain and the OS layer. The gate is disposed on the second insulating layer.