Semiconductor Charge Transfer via Segmented Doping

The patent divides the semiconductor substrate into multiple doped regions (first doped region, second doped region, third doped region) with different conductivity types and impurity concentrations. This segmentation creates distinct functional zones that enable charge transfer at specific locations while maintaining isolation in other areas, allowing complete charge transfer at low voltages without compromising electrical isolation or increasing energy consumption

The patent applies local quality by creating regions with different impurity concentrations and conductivity types in specific locations. The first doped region has a first impurity concentration, the second doped region has a second impurity concentration, and the third doped region has a third impurity concentration. This local variation in material properties enables precise control of charge transfer paths and electrical isolation boundaries, achieving complete charge transfer at low voltages while maintaining energy efficiency

The patent segments the semiconductor structure into distinct doped regions with different conductivity types. The second doped region with the second conductivity type acts as an isolation barrier between adjacent photoelectric conversion elements, while the first and third doped regions facilitate charge transfer. This spatial segmentation enables complete charge transfer without compromising electrical isolation between elements

The patent introduces a second doped region with the second conductivity type as an intermediary structure between the first doped region and the third doped region. This intermediary region serves dual functions: it enables charge transfer through the first photoelectric conversion element while simultaneously providing electrical isolation from adjacent elements, preventing harmful electrical interference without requiring high voltages