Semiconductor Chip Bonding Method Using Multi-Step Heating
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving high-performance, high-speed, and compact electronic systems due to limitations in bonding methods for semiconductor chips to underlying structures, which affect integration degree and reliability.
Innovation Solution
A bonding method involving the alignment of a semiconductor chip's electrical contact with an underlying structure's connection member, encased in a support material, where the chip and structure are heated to deform and cure the contact, ensuring a strong bond while maintaining the support material in a cured state, using a multi-step heating process in separate apparatuses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the electrical contact is deformed during bonding, then the bonding strength is improved, but the support material may deform or lose its structural integrity
Solution Approach 1:
The patent applies parameter changes by controlling the temperature and viscosity of the support material during the bonding process. The support material's viscosity is adjusted to allow electrical contact deformation while maintaining structural integrity through precise parameter control during heating and curing stages
Solution Approach 2:
The support material is applied to encase the electrical contact before bonding occurs. This preliminary action prepares the support structure to maintain integrity during the subsequent deformation and bonding processes, ensuring the electrical contact can be properly deformed without compromising overall structure
2Reliability
If a multi-step heating process is used to deform and cure the support material, then the bonding quality is improved, but the manufacturing complexity increases
Solution Approach 1:
The bonding process is segmented into distinct heating stages: first heating to deform the electrical contact, then curing the support material, and second heating to complete the bonding. This segmentation allows each step to be optimized independently while maintaining overall process control and bonding quality
Solution Approach 2:
The multi-step heating process maintains continuous useful action by seamlessly transitioning between deformation, curing, and bonding stages without interrupting the overall bonding objective. Each heating stage builds upon the previous stage to achieve cumulative bonding quality improvement
3Stability of the object's composition
If the support material is cured at high temperature, then the structural stability is improved, but the electrical contact may deform excessively or melt
Solution Approach 1:
The electrical contact is deformed during the first heating stage before the support material curing begins. This preliminary deformation action ensures the electrical contact achieves its desired shape while the support material is still in a controllable state, preventing excessive deformation during subsequent high-temperature curing
Solution Approach 2:
The patent controls the temperature parameters at each heating stage to match the specific requirements of the materials being processed. The first heating temperature is optimized for electrical contact deformation, while the curing temperature is controlled to stabilize the support material without causing excessive electrical contact deformation or melting
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the integration and reliability of semiconductor devices by ensuring a robust bond between the chip and the underlying structure, improving the performance and compactness of electronic systems.
Implementation Method 1
The first heating may be carried out at a first temperature which is higher than a melting temperature of the support material, and the electrical contact may be deformed while the support material is a melted state
Implementation Method 2
The support material may be cured by heating at a second temperature to polymerize the support material
Implementation Method 3
The second heating may be carried out at a third temperature which is higher than a melting temperature of the electrical contact and lower than a melting temperature of the cured support material
Data Source
AI summary
A bonding method for bonding a semiconductor chip to an underlying structure includes aligning an electrical contact of a lower surface of the semiconductor chip with an electrical connection member of an upper surface of the underlying structure, the electrical contact at least partially encased by a support material. The method further includes first heating the semiconductor chip and the underlying structure, deforming the electrical contact, and curing the support material encasing the deformed electrical contact. The method still further includes second heating the semiconductor chip and the underlying structure to bond the electrical contact of the semiconductor chip to the electrical connection member of the underlying structure while maintaining the support material in a cured state.