Semiconductor Chip Bonding via Sinter Material Surface Treatment
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Solution Overview
Problem
In semiconductor device manufacturing, adsorption of oxygen and carbon on the surface of conductive plates can reduce the adhesion of sinter materials, leading to displacement of semiconductor chips during bonding, which results in poor connections and decreased yield and quality.
Innovation Solution
A method involving a first treatment process to reduce oxygen and carbon adsorption on the conductive plate surface to 20 atomic % or less, followed by a checking process to ensure the surface temperature is below a reference temperature, allowing for temporary and definitive bonding of semiconductor chips using a sinter material with controlled heat and pressure conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the conductive plate surface is exposed to environment during handling, then oxygen and carbon are adsorbed on the surface, but adhesion of sinter material is reduced
Solution Approach 1:
The conductive plate undergoes a preliminary reducing atmosphere treatment before chip placement to reduce adsorbed oxygen and carbon on the surface. This preliminary action ensures the surface is in a low-adsorption state when the sinter material is applied, preventing adhesion reduction that would occur if the plate were simply exposed to the environment during handling.
Solution Approach 2:
The patent employs a reducing atmosphere (inert environment) during the treatment process to prevent oxidation and carbon adsorption on the conductive plate surface. By maintaining this controlled atmospheric environment, the surface remains clean and receptive to sinter material adhesion, counteracting the harmful effects of environmental exposure.
2Manufacturing precision
If sinter material adhesion is reduced due to surface contamination, then chip displacement occurs during bonding, but connection quality deteriorates
Solution Approach 1:
The reducing atmosphere treatment is performed as a preliminary step before chip placement to eliminate surface contamination. This ensures both good adhesion (preventing displacement) and maintains the capability for high-quality connections, resolving the contradiction between positioning accuracy and connection quality.
3Reliability
If temperature is increased to enhance sinter material bonding, then adhesion improves, but oxygen and carbon re-adsorption increases
Solution Approach 1:
The reducing atmosphere is maintained during the heating and bonding process to prevent re-adsorption of oxygen and carbon even at elevated temperatures. This allows the temperature to be increased for enhanced adhesion while the inert environment blocks the harmful re-adsorption that would normally occur at high temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method minimizes chip displacement and ensures strong, reliable connections between semiconductor chips and conductive plates, enhancing the quality and yield of semiconductor devices by maintaining sufficient adhesion of the sinter material.
Implementation Method 1
a first treatment process for providing a conductive plate having oxygen and carbon adsorbed to a main surface thereof, and reducing an amount of the oxygen and the carbon adsorbed to the main surface of the conductive plate
Implementation Method 2
a second bonding process for further applying, after the preparatory process, heat and pressure to the sinter material according to a second condition that sinters the sinter material
Data Source
AI summary
A semiconductor device manufacturing method, including: a first treatment process for reducing an amount of oxygen and carbon adsorbed to a main surface of the conductive plate to 20 atomic % or less; a first checking process for checking whether the conductive plate has a temperature no higher than a reference temperature; a chip placement process for placing, responsive to the conductive plate having the temperature no higher than the reference temperature, a semiconductor chip on the main surface of the conductive plate via a sinter material; a first bonding process for applying heat and pressure to the sinter material according to a first condition that allows the organic substance to partially remain; a preparatory process for making preparations for further bonding the semiconductor chip; and a second bonding process for further applying heat and pressure to the sinter material according to a second condition that sinters the sinter material.