Semiconductor Chip Cover Protection Layer Crack Prevention
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Solution Overview
Problem
Semiconductor chips are prone to damage, such as cracks, during the process of dividing from a semiconductor substrate, which can lead to defects and reduced functionality.
Innovation Solution
A semiconductor chip design incorporating a cover protection layer that integrates with a passivation layer and includes a buffering protection layer to protect the residual scribe lane and corner areas, preventing damage during the division process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a semiconductor substrate is divided into semiconductor chips using conventional methods, then productivity is improved, but the chips are prone to damage such as cracks during the division process
Solution Approach 1:
A cover protection layer is formed on the semiconductor substrate before the division process. This protective layer is applied in advance to prevent cracks and damage during subsequent chip separation operations, thereby maintaining chip integrity while enabling efficient productivity
Solution Approach 2:
The cover protection layer acts as a cushioning layer that absorbs stress and prevents crack propagation during the chip division process. By providing this protective barrier beforehand, the substrate can be divided into individual chips without compromising their structural integrity
2Reliability
If a cover protection layer is added to protect the semiconductor chip, then chip integrity is improved, but device complexity increases
Solution Approach 1:
The cover protection layer serves multiple functions simultaneously: it protects the semiconductor devices during division, provides mechanical strength, and can be integrated with existing passivation layers. This multi-functionality justifies the added structural complexity by delivering multiple benefits from a single layer
Solution Approach 2:
The protection structure uses composite material design where the cover protection layer is integrated with the passivation layer. This composite approach combines the protective functions with the existing device structure, achieving enhanced reliability while minimizing the increase in overall device complexity
Data Source
AI summary
Provided is a semiconductor chip capable of withstanding damage such as cracks created in the fabrication process. A semiconductor chip according to the inventive concept includes: a semiconductor substrate including a residual scribe lane surrounding a die region and a periphery of a die of the die region, a passivation layer covering a portion above the semiconductor substrate, a cover protection layer covering a portion of the passivation layer and the die region, and a cover protection layer formed integrally with a buffering protection layer covering a portion of the residual scribe lane, wherein the buffering protection layer includes a corner protection layer in contact with a portion of an edge adjacent to a corner of the semiconductor substrate, and an extending protection layer extending along the residual scribe lane from the corner protection layer and in contact with the cover protection layer.