Radiation-Emitting Semiconductor Chip with Isolated Cutouts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current radiation-emitting semiconductor chips face challenges in efficiently amplifying electromagnetic radiation to form laser radiation with high coherence length and narrow emission spectrum, and in achieving effective electrical and optical isolation between segments.
Innovation Solution
A radiation-emitting semiconductor chip with a semiconductor body having an active region within a resonator, where a cutout with specific coatings on its side surfaces enhances reflectivity to amplify electromagnetic radiation, forming laser radiation through stimulated emission, and includes segments electrically and optically isolated by the cutout for distinct functionalities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a resonator is used to amplify electromagnetic radiation to form laser radiation, then the coherence length and narrow emission spectrum are improved, but the device complexity increases due to the need for precise resonator design and coating application
Solution Approach 1:
The semiconductor body is divided into multiple segments separated by cutouts, with each segment containing an active region. This segmentation allows independent optimization of each segment while maintaining overall laser radiation generation, reducing the complexity of designing a single large resonator structure.
Solution Approach 2:
Different coatings with specific reflectivities are applied to the side surfaces of the cutouts based on local optical requirements. The first coating on the first side surface and the second coating on the second side surface have different reflectivity characteristics, allowing precise control of electromagnetic radiation at different locations within the resonator.
2Reliability
If cutouts with coatings are introduced to isolate segments electrically and optically, then the isolation effectiveness is improved, but the manufacturing precision requirements increase due to the need for precise coating application on narrow cutout surfaces
Solution Approach 1:
The cutouts are formed in the semiconductor body before the coatings are applied to the side surfaces. This preliminary formation of the cutout structure provides a defined substrate for subsequent coating application, ensuring proper adhesion and positioning of the reflective coatings.
Solution Approach 2:
The width of the cutouts is controlled within specific ranges (at most 800 nanometers, at most 15 micrometers, at most 5 micrometers, and particularly preferably at most 2 micrometers) to optimize both the isolation effectiveness and the feasibility of coating application. By adjusting the cutout dimensions, the patent balances isolation performance with manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The chip effectively generates high-coherence laser radiation with narrow emission spectrum and allows for electrical and optical isolation of segments, improving radiation emission properties and segment functionality.
Implementation Method 1
the electromagnetic radiation is generated in the active region by way of stimulated emission that leads to the formation of electromagnetic laser radiation
Implementation Method 2
the resonator is designed in particular to amplify the electromagnetic radiation generated in the active region
Implementation Method 3
the first side surface has a first coating, which predefines a reflectivity for the electromagnetic radiation of the active region
Data Source
AI summary
The invention relates to a radiation-emitting semiconductor chip having the following features:—a semiconductor body including an active region which, during operation, generates electromagnetic radiation and is arranged in a resonator, —at least one recess in the semiconductor body, which recess completely penetrates the active region, wherein—the recess has a first lateral face and a second lateral face opposite the first lateral face, and—the first lateral face has a first coating which specifies a reflectivity for the electromagnetic radiation of the active region, and/or—the second lateral face has a second coating which specifies a reflectivity for the electromagnetic radiation of the active region. The invention further relates to a method for producing such a semiconductor chip.