Semiconductor Chip Dielectric Mirror for Corrosion Resistance
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Solution Overview
Problem
Existing light-emitting semiconductor chips face challenges in corrosion resistance and reflectivity, particularly during the production process, which affects their performance and durability, especially for small chips with edge lengths of up to 300 μm.
Innovation Solution
The design incorporates a semiconductor body with a dielectric mirror and a metallic mirror, where the dielectric mirror completely covers the semiconductor body on its side facing away from the light exit side, and the metallic mirror contacts the semiconductor body through openings in the dielectric mirror, ensuring high reflectivity and corrosion resistance without the need for encapsulation, and using a current extension layer for uniform energization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a metallic mirror is used to reflect light in small semiconductor chips, then high reflectivity is achieved, but corrosion resistance deteriorates during production
Solution Approach 1:
The mirror structure is segmented into two distinct functional layers: a dielectric mirror layer for corrosion protection and a metallic mirror layer for high reflectivity. This segmentation allows each layer to specialize in its primary function without compromising the other.
Solution Approach 2:
The dielectric mirror layer acts as an intermediary between the semiconductor body and the metallic mirror layer. It provides a protective barrier that prevents direct exposure of the metallic layer to corrosive environments during production, while still allowing the metallic layer to perform its light reflection function.
2Length of moving object
If the semiconductor body is made small to reduce device size, then miniaturization is achieved, but manufacturing precision deteriorates
Solution Approach 1:
The dielectric mirror layer is applied to the semiconductor body before the metallic mirror layer. This preliminary action ensures that the protective layer is in place prior to subsequent manufacturing steps, preventing corrosion and damage during further processing of the small chip structure.
Solution Approach 2:
The chip employs a composite structure combining dielectric and metallic materials in a layered configuration. This composite approach enables the small chip to maintain both high reflectivity and corrosion resistance, overcoming the manufacturing precision challenges associated with miniaturization.
3Reliability
If encapsulation is added to protect the metallic mirror, then corrosion resistance is improved, but device complexity increases
Solution Approach 1:
The protective function previously requiring separate encapsulation structures is merged into the dielectric mirror layer itself. This layer simultaneously serves as both the optical mirror component and the corrosion protection barrier, eliminating the need for additional encapsulation layers and reducing overall structural complexity.
Solution Approach 2:
The dielectric mirror layer is designed to perform multiple functions: it acts as the primary mirror for light reflection, provides corrosion protection for the metallic layer, and serves as an adhesive interface. This multi-functionality reduces the need for additional protective structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in a small light-emitting semiconductor chip with high luminous efficacy and improved durability, maintaining high reflectivity and resistance to corrosion, even in small sizes, and allows for cost-effective production.
Implementation Method 1
The dielectric mirror then comprises a plurality of first mirror layers and of second mirror layers, wherein the first mirror layers and the second mirror layers differ from one another with respect to their refractive index
Implementation Method 2
The dielectric mirror is in particular designed to reflect the light generated in the active region during operation of the semiconductor chip
Implementation Method 3
The metallic mirror is characterized by a reflectivity of at least 50% for the light generated in the active region during operation of the semiconductor chip
Data Source
AI summary
A light-emitting semiconductor chip and a method for producing a light-emitting semiconductor chip are disclosed. In an embodiment a light-emitting chip includes a semiconductor body having an active region designed to generate light, a dielectric mirror including an electrically insulating material and a first metallic mirror including an electrically conductive material, wherein the semiconductor body expands towards a light exit side, wherein the dielectric mirror is arranged on a side of the semiconductor body facing away from the light exit side, wherein the first metallic mirror is arranged on a side of the dielectric mirror facing away from the semiconductor body, wherein the first metallic mirror electrically contacts the semiconductor body through at least one opening in the dielectric mirror, and wherein the dielectric mirror, apart from the at least one opening, completely covers the semiconductor body on the side facing away from the light exit side.