Semiconductor Chip Insulation via Dual-Layer Dielectric Bonding
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Solution Overview
Problem
The existing methods for die bonding semiconductor chips to islands using insulating pastes or films face issues such as slanting of chips, void generation, and reduced electrical insulating strength, which affect the precision of wire bonding and the reliability of semiconductor devices.
Innovation Solution
A semiconductor device configuration that uses a combination of a first insulating material with a lower modulus of elasticity and a second insulating material with a higher modulus of elasticity, applied in a specific manner to ensure firm attachment of the chip to the island, preventing voids and maintaining high electrical insulating strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating paste is used for providing insulation between the island and the semiconductor chip, then the insulation is achieved, but the semiconductor chip may unduly slant during the die bonding or voids may be generated in the insulating paste, thereby lowering the electrical insulating strength
Solution Approach 1:
The patent divides the insulating structure into two separate parts: an insulating paste layer and an insulating film layer. The insulating paste is applied first to provide base insulation, then an insulating film is formed over it to provide additional insulation and structural support. This segmentation allows each layer to fulfill specific functions without compromising the other, preventing both slanting and void formation while maintaining high electrical insulating strength.
Solution Approach 2:
The patent uses a composite structure combining insulating paste (resin-based material) and insulating film (solid film material) to create a multi-layer insulating system. This composite approach leverages the advantages of both materials: the paste provides good adhesion and fills gaps, while the film provides dimensional stability and prevents slanting, together achieving superior electrical insulation and manufacturing precision.
2Reliability
If an insulating film is used for adhering the semiconductor chip to the island, then the electrical insulation is maintained, but it is necessary to prepare an additional device for the insulating film and chippings may be attached to the insulating film, thereby lowering the electrical insulating strength
Solution Approach 1:
The patent merges the insulating paste application process with the insulating film formation process into a single integrated structure. The insulating film is formed directly over the cured insulating paste, combining both insulation mechanisms into one unified insulating system. This eliminates the need for separate handling of insulating film as an additional device while maintaining high electrical insulating strength and preventing chipping attachment issues.
3Reliability
If a single insulating material is used for adhering the semiconductor chip to the island, then the process is simplified, but the chip may slant during bonding or voids may be generated, thereby lowering the electrical insulating strength
Solution Approach 1:
The patent segments the insulating material system into two distinct layers: an insulating paste layer applied first and an insulating film layer formed subsequently. This segmentation allows each layer to be optimized for its specific function while maintaining a relatively simple overall manufacturing process. The paste provides initial insulation and adhesion, while the film provides additional insulation and prevents defects, together achieving high reliability without excessive manufacturing complexity.
Data Source
AI summary
A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating material 112 attached to side surfaces of the semiconductor chip 106, the first insulating material 110 and an island 102. The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112. The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102. Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110, the semiconductor chip 106 is firmly attached to the island 102.