Radiation-Emitting Semiconductor Chip Edge Dielectric Layout
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Solution Overview
Problem
Radiation-emitting semiconductor chips face challenges in reliability due to chipping of dielectric layers during the separation process, which can lead to impurity introduction and reduced performance.
Innovation Solution
The semiconductor chip design features a dielectric layer configuration where the second dielectric layer is absent in the edge region, reducing the common thickness of dielectric layers and preventing chipping, while a passivation layer and encapsulation layer provide moisture protection and easy separation, using a semiconductor layer sequence grown on a sapphire substrate with a recess structure for enhanced radiation emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the second dielectric layer is present in the edge region, then the dielectric layers provide complete encapsulation and protection, but the dielectric layers are prone to chipping during separation process
Solution Approach 1:
The second dielectric layer is selectively removed from the edge region to prevent chipping during separation, while maintaining its presence in the main region for electromagnetic radiation reflection. This extraction of the problematic portion eliminates the chipping hazard at edges where separation occurs.
Solution Approach 2:
The dielectric layer configuration varies by location: the first dielectric layer is present throughout the entire surface including edge regions for continuous protection, while the second dielectric layer is present only in the main region. This local differentiation optimizes both protection and chipping prevention.
2Object-generated harmful factors
If the second dielectric layer is removed from the edge region, then chipping is prevented, but the encapsulation coverage is reduced
Solution Approach 1:
The first dielectric layer and third dielectric layer are combined to provide continuous encapsulation in the edge region where the second dielectric layer is absent. This merging of protective layers ensures that moisture and contaminant protection is maintained despite the removal of the second dielectric layer.
Solution Approach 2:
Different dielectric layers are strategically positioned at different locations: the first dielectric layer covers the entire surface including edges for continuous protection, the second dielectric layer is restricted to the main region for reflection functionality, and the third dielectric layer provides additional edge protection. This local quality differentiation resolves the contradiction between chipping prevention and encapsulation coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of the radiation-emitting semiconductor chip by preventing dielectric layer chipping and impurity introduction, ensuring effective moisture protection and easy separation, thereby improving the chip's performance and durability.
Implementation Method 1
an active region arranged between the first semiconductor layer and the second semiconductor layer, wherein the active region is configured to generate electromagnetic radiation
Implementation Method 2
the second dielectric layer is configured to be reflective for electromagnetic radiation generated by the active region
Implementation Method 3
the semiconductor layer sequence is produced by an epitaxial growth process
Implementation Method 4
the first dielectric layer completely covers the semiconductor layer sequence in the border region
Data Source
AI summary
A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer of a first doping type and a second semiconductor layer of a second doping type. The chip may also include a first dielectric layer and a second dielectric layer arranged on the semiconductor layer sequence. A first recess may be arranged in the semiconductor layer sequence in a border region of the radiation-emitting semiconductor chip completely penetrating the first semiconductor layer. The first dielectric layer may cover the semiconductor layer sequence in the border region completely. The border region may be free of the second dielectric layer in an edge region. In addition, a method is disclosed for producing a radiation-emitting semiconductor chip.