Radiation-Emitting Semiconductor Chip With Integrated ESD Protection

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Solution Overview

Problem

Radiation-emitting semiconductor chips are vulnerable to electrostatic discharge (ESD) damage, which can be mitigated but often requires additional diodes increasing complexity and costs, or buffer layers that may not fully address the issue.

Innovation Solution

A radiation-emitting semiconductor chip design with a semiconductor body featuring a separate protective diode region integrated into the chip, which is electrically conductively connected to the emission region, allowing for ESD protection without additional external diodes and maintaining the chip's functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an additional protective diode is mounted outside the semiconductor chip, then electrostatic discharge protection is improved, but device complexity and mounting space requirements increase

Engineering Contradiction:

Improveelectrostatic discharge protectionVSAvoidmounting complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The protective diode function is merged with the emission region by laterally separating the active areas while sharing the same semiconductor layer sequence and electrical connections. The first semiconductor layer forms both the emission region active area and the protective diode active area, eliminating the need for separate protective diode mounting.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor layer sequence serves multiple functions: it generates radiation in the emission region and provides electrostatic discharge protection in the protective diode region. The same layer structure is used for both radiation generation and ESD protection, making the system more efficient.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If an additional protective diode is mounted outside the semiconductor chip, then electrostatic discharge protection is improved, but manufacturing costs increase

Engineering Contradiction:

Improveelectrostatic discharge protectionVSAvoidmanufacturing costs

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If the semiconductor layer sequence is laterally separated into emission region and protective diode region, then electrostatic discharge protection is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improveelectrostatic discharge protectionVSAvoidlateral separation precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

Different functional areas (emission region and protective diode region) are created within the same semiconductor layer sequence by controlling the lateral extent of active areas. The first semiconductor layer has different doping or structural properties in different lateral zones to create distinct functional regions.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The integrated protective diode region effectively shields the emission area from ESD damage, reducing the risk of chip destruction and simplifying the manufacturing process by eliminating the need for external protection diodes, while maintaining a minimal footprint and maximizing radiation power.

Implementation Method 1

an active region provided for generating electromagnetic radiation, which is arranged between a first semiconductor layer and a second semiconductor layer

Methodology Applied

Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

An undesired voltage, for example in the blocking direction in the active area of the emission area on the semiconductor chip, can flow off via the protective diode area

Methodology Applied

Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentEP2351079B1Radiation-emitting semiconductor chip

Publication Date: 2017.03.08 OSRAM OPTO SEMICON GMBH & CO OHG

Figure 1A~1B
Figure 2
Figure 3A~3B

AI summary

A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.