Semiconductor Chip Heat Spreading Layer and Through Electrodes
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Solution Overview
Problem
Semiconductor packages face challenges in efficiently dissipating heat without increasing chip size, particularly in multi-chip configurations where heat management is critical for performance and reliability.
Innovation Solution
A semiconductor chip design featuring through electrodes and a heat spreading layer made of high thermal conductivity materials like graphene, which are exposed and not covered by an insulating layer, allowing for effective heat dissipation without the need for additional thermal vias or structures, and a stacked package configuration that utilizes these chips with connection members for efficient heat discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional wire bonding technology is used for electrical connections, then electrical paths are formed, but the electrical paths are significantly long which increases resistance and heat generation
Solution Approach 1:
The patent replaces the mechanical wire bonding system with an electrical conduction system through TSV (Through-Silicon Via) technology. Instead of using physical wires to connect electrical signals between chips, the invention creates direct electrical conduction paths through conductive vias that pass through the substrate, significantly shortening the electrical path length and reducing resistance while eliminating the complexity of wire bonding operations
Solution Approach 2:
The patent transitions from planar electrical connections to three-dimensional vertical connections by forming TSVs that extend through the substrate thickness. This dimensional change allows electrical signals to travel vertically through the substrate rather than along the surface, dramatically reducing the electrical path length and enabling higher speed signal transmission
2Temperature
If heat dissipation structures are added to semiconductor chips, then heat dissipation efficiency is improved, but chip size increases
Solution Approach 1:
The patent makes the substrate serve multiple functions: it acts as both the mechanical support structure and the heat dissipation pathway. By forming TSVs that extend through the substrate and using the substrate itself as a heat sink, the design eliminates the need for separate heat dissipation structures, maintaining compact chip size while achieving effective heat management through the dual-functional substrate design
Solution Approach 2:
The patent merges the electrical connection function and heat dissipation function into a single integrated structure. The TSVs serve both as electrical conduction paths and as thermal conduction paths, while the substrate simultaneously provides mechanical support and acts as a heat sink. This consolidation eliminates the need for additional dedicated heat dissipation components, preventing chip size increase
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables rapid and efficient heat dissipation from the semiconductor chip, preventing operational issues due to heat and allowing for smaller chip sizes, while also preventing electrical shorts and eliminating the need for additional heat dissipation structures.
Implementation Method 1
a first heat spreading layer formed over the insulating layer
Data Source
AI summary
The disclosure relates to a semiconductor chip and a stacked type semiconductor package having the same. The semiconductor chip includes: a semiconductor chip body having a first surface formed with a plurality of bonding pads and a second surface which is opposite to the first surface, a plurality of first and second through electrodes that pass through the semiconductor chip body and one ends thereof are electrically connected to the bonding pads, an insulating layer formed over the second surface of the semiconductor chip body such that the other ends of the first and second through electrodes are not covered by the insulating layer, and a first heat spreading layer formed over the insulating layer.