Semiconductor Light Emitting Chip Insulating Layer Isolation
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Solution Overview
Problem
The existing semiconductor light emitting diodes face issues with abnormal electrostatic punctuation due to current accumulation caused by the direct contact between the anti-diffusion layer and the P-type gallium nitride layer, leading to potential electrical leakage and operational failures.
Innovation Solution
The introduction of an insulating layer that isolates the anti-diffusion layer from the P-type semiconductor layer, preventing direct contact and metal migration, while surrounding the reflective layer to enhance stability and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the anti-diffusion layer is made to directly contact the P-type gallium nitride layer to cover the silver mirror, then the silver mirror is protected from metal migration, but current accumulation occurs leading to abnormal electrostatic punctuation
Solution Approach 1:
An insulating layer is introduced as an intermediary between the anti-diffusion layer and the P-type gallium nitride layer. This insulating layer prevents direct contact while allowing the anti-diffusion layer to still cover and protect the silver mirror from metal migration, thereby eliminating the harmful electrostatic punctuation caused by current accumulation at the direct contact interface.
2Reliability
If the anti-diffusion layer directly contacts the P-type gallium nitride layer, then metal migration is prevented, but contact resistance is reduced causing current concentration
Solution Approach 1:
The insulating layer serves as a mediator that separates the anti-diffusion layer from the P-type gallium nitride layer. This separation prevents the formation of low-resistance contact paths that would concentrate current, while the anti-diffusion layer maintains its protective function over the silver mirror through the insulating layer.
3Reliability
If the silver mirror is used to form low resistance ohmic contact, then electrical connection is improved, but metal migration occurs under potential difference and high humidity
Solution Approach 1:
The insulating layer is positioned between the anti-diffusion layer and the P-type gallium nitride layer, allowing the anti-diffusion layer to cover the silver mirror and prevent metal migration while the insulating layer itself provides the necessary electrical isolation to prevent harmful electrostatic effects.
Solution Approach 2:
The structure employs a composite arrangement of multiple materials including the silver mirror for reflection, the anti-diffusion layer for migration prevention, and the insulating layer for electrical isolation. This composite structure addresses both the electrical connection requirements and the metal migration prevention needs.
Data Source
AI summary
A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.