Self-Organized Semiconductor Chip Assembly via Intermetallic Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for assembling semiconductor chips on substrates are complex and inefficient, particularly in rationalizing the assembly of geometrically identical or different chips with various functions on non-planar substrates, and they often result in unreliable connections that cannot withstand high temperatures.
Innovation Solution
A method involving a substrate with metallic liquid in a structured manner, where semiconductor chips with metallic termination layers form intermetallic compounds with higher re-melting temperatures, enabling self-organized arrangement and robust connection to the substrate, using a single metallic compound for enhanced reliability and ease of assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional assembly methods are used to assemble semiconductor chips on substrates, then the assembly process becomes complex and inefficient, but connection reliability and temperature resistance are improved
Solution Approach 1:
The patent changes the physical state parameter of the metallic compound from solid to liquid during assembly, enabling self-organized arrangement of semiconductor chips through capillary forces. The metallic compound is applied in liquid form, allowing chips to automatically position themselves, and then solidifies to form reliable intermetallic compound connections that resist high temperatures.
Solution Approach 2:
The patent introduces a metallic compound as an intermediary substance between the substrate and semiconductor chips. This metallic compound serves dual functions: as a liquid mediator during assembly to enable self-organization and positioning, and as a solid intermetallic compound after solidification to provide reliable, temperature-resistant connections.
2Productivity
If conventional assembly methods are used, then connection stability at high temperatures is improved, but the assembly process becomes inefficient and complex
Solution Approach 1:
The patent utilizes phase transition of the metallic compound from liquid to solid state. During assembly, the metallic compound is in liquid form enabling easy application and self-organized chip arrangement. After assembly, the liquid metallic compound solidifies to form stable intermetallic compounds that can withstand high temperatures during operation and subsequent processing.
3Ease of manufacture
If self-organized arrangement is used to simplify assembly, then ease of manufacture is improved, but connection reliability at high temperatures may worsen
Solution Approach 1:
The patent employs composite material strategy by using a metallic compound that forms intermetallic compounds with specific semiconductor materials. The metallic compound is selected to be immiscible with the semiconductor material, ensuring that upon solidification, distinct intermetallic compound layers form at the interface, providing both reliable mechanical bonding and thermal stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the assembly process, allows for the connection of semiconductor chips with different geometries and functions on non-planar substrates, and provides a robust, temperature-stable connection suitable for further processing and long-term reliability.
Implementation Method 1
the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid
Implementation Method 2
self-organized arranging the semiconductor chips on the metallic liquid
Implementation Method 3
providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate
Data Source
AI summary
A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.