Semiconductor Chip Layout With Wavelength Conversion for High Contrast
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Solution Overview
Problem
In semiconductor devices, particularly in vehicle head lamps, the close spacing of light-emitting chips leads to a reduction in contrast due to light leakage from adjacent chips, making it difficult to distinguish turned-off regions, especially when a wavelength conversion layer is used.
Innovation Solution
A semiconductor device design featuring a substrate with semiconductor structures spaced 5 µm to 40 µm apart, with a wavelength conversion layer thickness of 1 µm to 50 µm, and wiring lines connecting pads to the structures, enhancing contrast by controlling light emission and non-emission regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the interval between chips is decreased to minimize spacing and show them as a single light source, then the device compactness is improved, but the contrast between lit and unlit chips deteriorates due to light leakage from adjacent chips
Solution Approach 1:
The patent applies local quality by introducing a reflective layer specifically at the boundaries between adjacent semiconductor structures. This reflective layer is localized at the interfaces where light leakage occurs, rather than being applied uniformly across the entire device. The reflective layer selectively reflects light in the boundary regions while allowing normal light emission from the chip surfaces, thereby improving contrast without requiring increased spacing between chips.
2Use of energy by moving object
If a wavelength conversion layer is added to convert light wavelength, then the light emission efficiency is improved, but the contrast problem is further deteriorated due to increased light leakage
Solution Approach 1:
The patent addresses the contrast deterioration caused by wavelength conversion layers by applying the local quality principle. The reflective layer is strategically positioned at the boundaries between semiconductor structures, creating a localized solution that counteracts the light leakage effect. This allows the wavelength conversion layer to maintain its light emission efficiency improvement while the reflective layer compensates for the increased light leakage in boundary regions, thereby preserving contrast.
Solution Approach 2:
The reflective layer acts as an intermediary element between adjacent semiconductor structures. It mediates the light interaction at the boundaries by reflecting leaked light back, preventing it from reaching adjacent unlit chips. This intermediary reflective layer enables the wavelength conversion layer to function effectively while maintaining the necessary contrast between lit and unlit regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves contrast by minimizing light leakage between chips, allowing for independent lighting and better recognition of turned-off regions, thus enhancing the overall performance of light-emitting semiconductor devices.
Implementation Method 1
a wavelength conversion layer disposed on the plurality of semiconductor structures
Data Source
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AI summary
Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 µm to 40 µm and the thickness of the wavelength conversion layer is 1 µm to 50 µm.