Semiconductor Chip Layout Partitioning for Parallel OPC Retargeting

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Solution Overview

Problem

Existing semiconductor chip manufacturing processes face disparities between designed and transferred circuit patterns due to optical proximity and loading effects, leading to inefficiencies in pattern transfer and prolonged turnaround times.

Innovation Solution

A layout method for semiconductor chips that employs restriction rules to limit pattern lengths, partitions layouts into regions, and performs retargeting and optical proximity correction in parallel, ensuring independent processing of each region to improve parallelism and reduce turnaround time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the layout is processed as a single unit for retargeting, then pattern integrity is maintained, but processing time increases and parallelism is reduced

Engineering Contradiction:
Improvepattern integrityVSAvoidturnaround time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The layout is divided into multiple unit regions based on design rules that ensure patterns spanning across regions meet length requirements. This segmentation enables parallel retargeting processing of each region while maintaining pattern integrity through reference region inclusion at boundaries.

Inventive Principle:
Principle #1Segmentation

2Productivity

If the layout is partitioned into multiple regions for parallel processing, then turnaround time is reduced, but pattern integrity may be compromised at region boundaries

Engineering Contradiction:
Improveparallel processing performanceVSAvoidpattern integrity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

Reference regions are pre-added to unit regions before parallel retargeting processing. These reference regions contain pattern information from adjacent regions, enabling correct retargeting at boundaries while maintaining parallel processing efficiency.

Inventive Principle:
Principle #10Preliminary action

3Manufacturing precision

If retargeting is performed sequentially on the entire layout, then pattern accuracy is ensured, but manufacturing efficiency decreases

Engineering Contradiction:
Improvepattern accuracyVSAvoidmanufacturing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The layout is segmented into unit regions that can be processed independently in parallel. Design rules ensure that patterns requiring continuity across regions are properly handled through reference regions, enabling both parallel processing and pattern accuracy.

Inventive Principle:
Principle #1Segmentation

4Adaptability or versatility

If the layout uses unrestricted pattern lengths, then design flexibility is maintained, but optical proximity effects cause greater disparity between designed and transferred patterns

Engineering Contradiction:
Improvedesign flexibilityVSAvoidpattern transfer accuracy
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

Design rules are established that constrain pattern lengths in unit regions based on optical proximity effect characteristics. These parameter constraints reduce disparity between designed and transferred patterns while maintaining sufficient design flexibility for functional requirements.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12437138B2Layout method of semiconductor chip, semiconductor chip manufacturing method and computing device using same
Publication Date: 2025.10.07 SAMSUNG ELECTRONICS CO LTD
  • US12437138B2 patent drawing
  • US12437138B2 patent drawing
  • US12437138B2 patent drawing

AI summary

A layout method of a semiconductor chip, includes designing a layout using a restriction rule such that a layout pattern having a length smaller than a first length in a first direction has to have a length smaller than a second length in a second direction, the second direction intersecting the first direction, generating a plurality of unit regions by partitioning the layout in the first direction, generating a plurality of target regions by adding a reference region to a partitioned edge of each of the plurality of unit regions, retargeting the plurality of target regions in parallel, and generating a correction layout by merging the plurality of retargeted target regions.