Semiconductor Chip Forward Radiation via Mirror Gap Interference
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Solution Overview
Problem
Semiconductor chips used in displays suffer from inefficiencies due to radiation outcoupling in the lateral direction, which reduces contrast and requires large component heights, making them inefficient and bulky when combined with image-generating elements.
Innovation Solution
An optoelectronic semiconductor chip design featuring a semiconductor body with an active layer and a mirror layer, where the gap between the active and mirror layers is set to direct radiation emission strongly in the forward direction, utilizing a potting material with a lower refractive index to enhance beam shaping and reduce lateral radiation, and a display comprising multiple such chips arranged laterally to prevent radiation coupling between neighboring chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If semiconductor chips are combined with image-generating elements, then efficiency is improved, but component height increases
Solution Approach 1:
The patent combines the semiconductor chip with the image-generating element into a single integrated component, eliminating the need for separate components and their associated optical interfaces. This merging reduces optical losses at interfaces while maintaining a compact form factor through the integration architecture.
Solution Approach 2:
The patent transitions from a vertical stacking approach (increasing component height) to a lateral integration approach, where the image-generating element is positioned in the lateral plane rather than above the semiconductor chip. This dimensional change reduces the height in the beam path direction while maintaining efficient optical coupling.
2Loss of energy
If semiconductor chips are embodied in one component, then efficiency is improved, but contrast is reduced due to lateral radiation outcoupling
Solution Approach 1:
The patent extracts or removes the problematic lateral radiation that causes contrast reduction. By eliminating the lateral outcoupling paths through integrated design, the harmful lateral radiation is prevented from reaching neighboring chips, thereby maintaining high contrast while preserving forward radiation efficiency.
Solution Approach 2:
The patent converts the potentially harmful lateral radiation into a beneficial effect by using it for on-chip waveguide coupling. The radiation that would otherwise be lost laterally is instead directed into waveguides for useful optical signal transmission, improving overall efficiency without compromising contrast.
3Loss of energy
If lateral radiation outcoupling is prevented, then forward direction efficiency is increased, but device complexity increases
Solution Approach 1:
The patent combines multiple functions into the semiconductor chip structure itself. The waveguide layers and optical coupling structures are integrated directly into the chip fabrication process, eliminating the need for separate external components. This merging increases forward direction efficiency while managing complexity through integration rather than addition of separate parts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly increases the efficiency and contrast of the semiconductor chip and display by directing radiation predominantly in the forward direction, reducing lateral radiation emission and enhancing the beam shaping effect, thereby improving the overall performance and compactness of the display.
Implementation Method 1
radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer
Implementation Method 2
radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer
Implementation Method 3
arranging a potting material on the semiconductor body, the potting material having a refractive index less than the refractive index of the semiconductor material
Data Source
AI summary
An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.


